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부품번호 | EIC8596-4 기능 |
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기능 | Internally Matched Power FET | ||
제조업체 | Excelics Semiconductor | ||
로고 | |||
www.DataSheet4U.com
EIC8596-4
8.50-9.60 GHz 4-Watt Internally-Matched Power FET
Issued Date: 06-07-04
FEATURES
• 8.50 – 9.60 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -43 dBc IM3 at Po = 25.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC8596-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
f = 8.50-9.60GHz
Id1dB
Drain Current at 1dB Compression f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
IM3 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 9.60 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
35.5
6.5
-40
TYP
36.5
7.5
30
1100
-43
1800
-2.5
5.0
MAX
UNITS
dBm
dB
±0.6 dB
1300
%
mA
dBc
2200
-4.0
6.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2004
www.DataSheet4U.com
PACKAGE OUTLINE
Dimensions in inches, Tolerance + .005 unless otherwise specified
EIC8596-4
Excelics
EIC8596-4
YM
SN
ORDERING INFORMATION
Part Number
Grade1
EIC8596-4
Industrial
fTest (GHz)
8.50-9.60 GHz
P1dB (min)
35.5
Notes: 1. Contact factory for military and hi-rel grades.
2. Exact test conditions are specified in “Electrical Characteristics” table.
IM3 (min)2
-40
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 4 of 4
Revised July 2004
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