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STP62NS04Z
N-channel clamped 12.5mΩ - 62A - TO-220
Fully protected MESH OVERLAY™ Power MOSFET
General features
Type
STP62NS04Z
VDSS
(@Tjmax)
Clamped
RDS(on)
<0.015Ω
ID
62A
■ 100% avalanche tested
■ Low capacitance and gate charge
■ 175° C maximum junction temperature
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP62NS04Z
October 2006
Marking
P62NS04Z
Package
TO-220
Rev 5
Packaging
Tube
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Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 62A, VGS = 0
ISD = 40A,
di/dt = 100A/µs,
VDD = 20V, TJ = 150°C
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
62 A
248 A
1.5 V
45 ns
65 µC
2.9 A
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5 Revision history
Revision history
Table 7. Revision history
Date
Revision
21-Jun-2004
2
22-Aug-2005
3
21-Jan-2006
4
02-Oct-2006
5
Changes
Preliminary datasheet
Complete document with curves
New ECOPAK label
New template, no content change
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