|
|
|
부품번호 | P62NS04Z 기능 |
|
|
기능 | STP62NS04Z | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
STP62NS04Z
N-channel clamped 12.5mΩ - 62A - TO-220
Fully protected MESH OVERLAY™ Power MOSFET
General features
Type
STP62NS04Z
VDSS
(@Tjmax)
Clamped
RDS(on)
<0.015Ω
ID
62A
■ 100% avalanche tested
■ Low capacitance and gate charge
■ 175° C maximum junction temperature
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP62NS04Z
October 2006
Marking
P62NS04Z
Package
TO-220
Rev 5
Packaging
Tube
1/12
www.st.com
12
www.DataSEhleeect4tUri.ccoaml characteristics
2 Electrical characteristics
STP62NS04Z
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 16V
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±10V
Gate-Source
VGSS Breakdown Voltage
IGS = 100 µA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 30A
Min. Typ. Max. Unit
33 V
10 µA
10 µA
18 V
2 4V
12.5 15 mΩ
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1) Forward transconductance VDS = 15V, ID = 30A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f = 1 MHz,
VGS = 0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 20V, ID = 40A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Test conditions
VDD= 20V, ID= 20A,
RG=4.7Ω, VGS = 10V
Figure 13 on page 8
Vclamp = 30V, ID = 40A
RG = 4.7Ω, VGS = 10V
Figure 13 on page 8
Min. Typ. Max. Unit
20 S
1330
420
135
pF
pF
pF
34 47
10
11.5
nC
nC
nC
Min. Typ. Max. Unit
13 ns
104 ns
41 ns
42 ns
30 ns
54 ns
90 ns
4/12
4페이지 www.DataSShTeePt46U2.NcoSm04Z
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized BVDSS vs temperature
7/12
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ P62NS04Z.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
P62NS04Z | STP62NS04Z | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |