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부품번호 | PSMN038-100K 기능 |
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기능 | N-channel enhancement mode field-effect transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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www.DataSheet4U.com
PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001
Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN038-100K in SOT96-1 (SO8).
2. Features
s Very low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertor
s Computer motherboards
s Switch mode power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
85
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. SiliconMAX is a trademark of Royal Philips Electronics.
2. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
www.DataSheet4U.com
PSMN038-100K
N-channel enhancement mode field-effect transistor
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Rth(j-sp) thermal resistance from junction to solder
point
Conditions
mounted on a metal clad substrate; Figure 4
7.1 Transient thermal impedance
Value Unit
20 K/W
102
Zth(j-sp)
(K/W)
10 δ = 0.5
0.2
0.1
1 0.05
0.02
10-1
single pulse
10-2
10-4
10-3
10-2
10-1
03ad96
P
δ
=
tp
T
tp
T
t
1 10 tp (s) 102
Tsp = 25 °C
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
4 of 13
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PSMN038-100K
N-channel enhancement mode field-effect transistor
03aa32
5
4.5
VGS(th)
(V) 4
3.5
max.
3
typ.
2.5
2 min
1.5
1
0.5
0
-60 -20 20 60 100 140 180
Tj (oC)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
10-1
ID
(A) 10-2
03aa35
10-3
10-4
min typ
max
10-5
10-6
012345
VGS (V)
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
40
VDS > ID X RDSon
gfs
(S)
Tj = 25 ºC
30
150 ºC
20
03ae01
104
Ciss,
Coss,
Crss
(pF)
103
03ae03
Ciss
10
0
0 10 20 30 40 ID (A) 50
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
102
10-1
1
Coss
Crss
10 VDS (V) 102
VGS = 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PSMN038-100K | N-channel enhancement mode field-effect transistor | NXP Semiconductors |
PSMN038-100YL | N-channel MOSFET | NXP Semiconductors |
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