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Número de pieza | STD75N3LLH6 | |
Descripción | Power MOSFETs | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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No Preview Available ! STD75N3LLH6, STP75N3LLH6
STU75N3LLH6, STU75N3LLH6-S
N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Order codes
STD75N3LLH6
STP75N3LLH6
STU75N3LLH6
STU75N3LLH6-S
VDSS
30 V
RDS(on) max
< 0.0055 Ω
ID
75 A
< 0.0059 Ω
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
Switching applications
Description
This N-Channel Power MOSFET product utilizes
the 6th generation of design rules of ST’s
proprietary STripFET™ technology, with a new
gate structure.The resulting Power MOSFET
exhibits the lowest RDS(on) in all packages.
TAB
IPAK
3
2
1
TAB
3
2
1
Short IPAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order codes
STD75N3LLH6
STP75N3LLH6
STU75N3LLH6
STU75N3LLH6-S
Marking
75N3LLH6
S(3)
AM01474v1
Package
DPAK
TO-220
IPAK
Short IPAK
Packaging
Tape and reel
Tube
July 2011
Doc ID 15978 Rev 4
1/21
www.st.com
21
Free Datasheet http://www.datasheet4u.com/
1 page STD/P/U75N3LLH6, STU75N3LLH6-S
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 15 V, ID = 37.5 A
RG = 4.7 Ω VGS = 5 V
(see Figure 13)
Min.
-
Typ.
9.5
30
37
12
Max Unit
ns
ns
-
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 37.5 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75 A,
di/dt = 100 A/µs,
VDD = 24 V
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
75 A
-
300 A
- 1.1 V
24
- 16.8
1.4
ns
nC
A
Doc ID 15978 Rev 4
5/21
Free Datasheet http://www.datasheet4u.com/
5 Page STD/P/U75N3LLH6, STU75N3LLH6-S
Package mechanical data
Table 8. Short IPAK mechanical dimensions
Dim.
A
A1
b
b2
b4
c
c2
D
E
e
e1
H
L
L1
L2
Min
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.80
3.00
0.80
mm
Typ
2.25
0.80
Max
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
10.40
3.40
1.20
1.00
Figure 20. Short IPAK mechanical drawing
Doc ID 15978 Rev 4
?!
11/21
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet STD75N3LLH6.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD75N3LLH6 | Power MOSFETs | ST Microelectronics |
STD75N3LLH6 | N-channel MOSFET | STMicroelectronics |
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