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부품번호 | 4501GM 기능 |
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기능 | AP4501GM | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
전체 8 페이지수
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4501GM
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
30 -30
±20 ±20
7.0 -5.3
5.8 -4.7
20 -20
2
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200805264
AP4501GM
www.DaNtaS-Cheheta4Un.cnoeml
40
T A =25 ℃
30
10V
7.0V
5.0V
4.5V
20
V G =3.0V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
34
I D = 5A
30 T A = 25 o C
26
22
18
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
6
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
T A =150 ℃
10V
7.0V
5.0V
30 4.5V
20
V G =3.0V
10
0
012345
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =7A
V G =10V
1.4
1.0
30 -30
0.6
-50 0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
4페이지 www.DaPta-SCheheta4Un.ncoeml
15
12
I D = -5.3A
V DS = -15V
9
6
3
0
0.0 4.0 8.0 12.0 16.0 20.0
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10
-V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
AP4501GM
f=1.0MHz
1000
C iss
C100
oss
C rss
10
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
300.01
Single Pulse
0.01
0.0001
0.001
0.01
-30
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.1 1 10 100 1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
7
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부품번호 | 상세설명 및 기능 | 제조사 |
4501GM | AP4501GM | Advanced Power Electronics |
4501GSD | AP4501GSD | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |