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PDF HFP50N06 Data sheet ( Hoja de datos )
| Número de pieza | HFP50N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Shantou Huashan | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONSL
Low Voltage high-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg
Tj
PD
VDSS
VGSS
ID
Storage Temperature
Operating Junction Temperature
Allowable Power Dissipation Tc=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current Tc=25
-55~175
150
130W
60V
±20V
50A
N-Channel MOSFET
HFP50N06
TO-220
1G
2D
3S
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
60
IGSS Gate –Source Leakage Current
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
Ciss Input Capacitance
0.018
880
Coss Output Capacitance
430
Crss Reverse Transfer Capacitance
110
td(on) Turn - On Delay Time
60
tr Rise Time
185
td(off) Turn - Off Delay Time
75
tf Fall Time
60
Qg Total Gate Charge
39
Qgs Gate–Source Charge
9.5
Qgd Gate–Drain Charge
13
Is Continuous Source Current
VSD Diode Forward Voltage
Rth j-c
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s
Duty Cycle
2%
1
100
4.0
0.023
1140
560
140
130
380
160
130
45
50
1.5
1.15
V ID=250 A ,VGS=0V
A VDS = 60V VGS=0
nA VGS= 20V , VDS =0V
V VDS = VGS , ID =250 A
Ω VGS=10V, ID =25A
pF
pF VDS =25V, VGS=0,f=1MHz
pF
nS
nS VDD =30V, ID =25A
nS RG= 50 *
nS
nC VDS =48V
nC VGS=10V
nC ID=50A*
A
V IS =50A , VGS=0
/W
1 page  
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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFP50N06
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HFP50N06.PDF ] | |
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