(PDF) KRF1302S Datasheet - HEXFET Power MOSFET

Número de pieza	KRF1302S
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type TransistIoCrs HEXFET Power MOSFET KRF1302S Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175 Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 11gGaatete 22dDrarainin 33sSoouurcrcee Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,TC = 25 Continuous Drain Current, VGS @ 10V,TC = 100 Pulsed Drain Current Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current*1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Junction-to-Case Junction-to-Ambient (PCB mount) Symbol ID ID IDM PD VGS EAS IAR EAR dv/dt TJ,TSTG R JC R JA Rating 174 120 700 200 1.4 20 350 Fig.1.2 TBD -55 to + 175 300 0.74 40 Unit A W W/ V mJ A mJ V/ns /W Fig1. Unclamped Inductive Test Circuit Fig 2. Unclamped Inductive Waveforms www.kexin.com.cn 1 1 page

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PDF KRF1302S Data sheet ( Hoja de datos )