(PDF) KRF7389 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7389
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7389 Features Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current Ta = 25 ID Continuous Drain Current Ta = 70 ID Pulsed Drain Current 1 IDM Continuous Source Current (Diode Conduction) IS Power Dissipation @Ta= 25 @Ta= 70 PD Gate-to-Source Voltage VGS Single Pulse Avalanche Energy EAS IAR Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt 2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 3 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 N-Channel ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -2.8A, di/dt 1500A/ s, VDD V(BR)DSS, TJ 150 3 Surface mounted on FR-4 board, t 10sec. N-Channel P-Channel 30 -30 7.3 -5.3 5.9 -4.2 30 -30 2.5 -2.5 2.5 1.6 20 82 140 4.0 -2.8 0.20 3.8 -2.2 -55 to + 150 50 Unit V A W V mJ A mJ V/ns /W www.kexin.com.cn 1 1 page

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PDF KRF7389 Data sheet ( Hoja de datos )