(PDF) KRF7507 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7507
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current VGS Ta = 25 ID Continuous Drain Current VGS Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Gate-to-Source Voltage Single Pulse tp<10 S VGSM Peak Diode Recovery dv/dt 2 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient3 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel P-Channel 20 -20 2.4 -1.7 1.9 -1.4 21 -14 1.25 0.8 10 12 16 5.0 -5.0 -55 to + 150 100 2 N-Channel ISD 1.7A, di/dt 100A/ s, VDD P-Channel ISD -1.2A, di/dt 50A/ s, VDD 3 Surface mounted on FR-4 board, t 10sec. V(BR)DSS, TJ V(BR)DSS, TJ 150 150 Unit V A W mW/ V V V/ ns /W www.kexin.com.cn 1 1 page

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PDF KRF7507 Data sheet ( Hoja de datos )