(PDF) KRF7663 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7663
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 PD Linear Derating Factor Single Pulse Avalanche Energy 2 EAS Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 3 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 Starting TJ = 25 , L = 17.8mH,RG = 25 , IAS = -3.6A 3 When mounted on 1 inch square copper board, t 10 sec Rating -20 -8.2 -6.6 -66 1.8 1.15 10 115 12 -55 to + 150 70 Unit V A W mW/ mJ V /W www.kexin.com.cn 1 1 page

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PDF KRF7663 Data sheet ( Hoja de datos )