(PDF) KRF7756 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7756
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7756 ICIC Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Available in Tape & Reel TSSOP-8 Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ TA = 25 ID Continuous Drain Current, VGS @ -4.5V @ TA = 70 ID Pulsed Drain Current 1 IDM Power Dissipation 2 @TA= 25 PD Power Dissipation 2 @TA = 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 2 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 Surface mounted on FR-4 board, 10sec Rating -12 -4.3 -3.5 -17 1.0 0.64 8 8 -55 to + 150 125 Unit V A W W m W/ V /W www.kexin.com.cn 1 1 page

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PDF KRF7756 Data sheet ( Hoja de datos )