(PDF) KRF8910 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF8910
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type Features HEXFET Power MOSFET KRF8910 ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Gate-to-Source Voltage VGS Continuous Drain Current, VGS @ 10V Ta = 25 ID Continuous Drain Current,VGS @ 10V TC = 70 ID Pulsed Drain Current 1 IDM Maximum Power Dissipation Ta = 25 Maximum Power Dissipation Ta = 70 PD Linear Derating Factor Operating Junction and Storage Temperature Range TJ,TSTG Junction-to-Drain Lead R JL Maximum Junction-to-Ambient 2,3 R JA Single Pulse Avalanche Energy 4 EAS Avalanche Current 1 IAR 1 Repetitive rating; pulse width limited by max. junction temperature. 2 when mounted on 1 inch square copper board. 3 R is measured at TJ of approxmately 90 4Starting TJ = 25 , L = 0.57mH, RG = 25 , IAS = 8.2A. Rating 20 20 10 8.3 82 2 1.3 0.016 -55 to + 150 20 62.5 19 8.2 Unit V A W /W /W mJ A www.kexin.com.cn 1 1 page

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PDF KRF8910 Data sheet ( Hoja de datos )