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PDF RQA0005MXAQS Data sheet ( Hoja de datos )

Número de pieza RQA0005MXAQS
Descripción Silicon N-Channel MOS FET
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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RQA0005MXAQS
Silicon N-Channel MOS FET
Features
High Output Power, High Gain, High Efficiency
Pout = +33 dBm, Linear Gain = 21 dB, PAE = 68% (f = 520 MHz)
Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK R )
3
321
4
1
REJ03G1568-0100
Rev.1.00
Jul 04, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “MX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
0.8
9
150
–50 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1568-0100 Rev.1.00 Jul 04, 2007
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RQA0005MXAQS
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Output Power, Drain Current
vs. Input Power
40
0.6
Pout
30
0.5
20
ID
0.4
10 0.3
VDS = 6 V
f = 520 MHz
IDQ = 200 mA
0 0.2
0 5 10 15 20 25
Input Power Pin (dBm)
Power Gain, Powe Added Efficiency
vs. Frequency
20 80
PAE
15 60
PG
10 40
5 20
VDS = 6V
IDQ = 200 mA
Pin = 20 dBm
00
450 470 490 510 530 550
Frequency f (MHz)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
20 80
PAE
15 70
PG
10 60
5 50
f = 520 MHz
IDQ = 200 mA
Pin = 20 dBm
0 40
345678
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Input Power
40 80
PAE
30
60
PG
20
40
10 20
VDS = 6 V
f = 520 MHz
IDQ = 200 mA
00
0 5 10 15 20 25
Input Power Pin (dBm)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20
450
VDS = 6 V
IDQ = 200 mA
Pin = 20 dBm
470 490 510 530
Frequency f (MHz)
550
Power Gain, Power Added Efficiency
vs. Idling Current
20 80
15 PG 75
10 70
PAE
5 65
VDS = 6 V
f = 520 MHz
Pin = 20 dBm
0 60
0 0.1 0.2 0.3 0.4 0.5
Idling Current IDQ (A)
REJ03G1568-0100 Rev.1.00 Jul 04, 2007
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