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Número de pieza | RQA0008NXAQS | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Renesas Technology | |
Logotipo | ||
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RQA0008NXAQS
Silicon N-Channel MOS FET
Features
• High Output Power, High Gain, High Efficiency
Pout = +36 dBm, Linear Gain = 18 dB, PAE = 65% (f = 520 MHz)
• Compact package capable of surface mounting
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK R )
3
321
4
1
REJ03G1569-0100
Rev.1.00
Jul 04, 2007
1. Gate
2. Source
3. Drain
4. Source
Note: Marking is “NX”.
2, 4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
Pchnote
Tch
Tstg
Ratings
16
±5
2.4
10
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1569-0100 Rev.1.00 Jul 04, 2007
Page 1 of 7
1 page RQA0008NXAQS
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Output Power, Drain Current
vs. Input Power
40
2.0
Pout
30
1.5
20 1.0
ID
10
0
0
VDS = 6 V
f = 520 MHz
0.5
IDQ = 400 mA
0
5 10 15 20 25
Input Power Pin (dBm)
Power Gain, Power Added Efficiency
vs. Frequency
20 80
PG
15
PAE
10
60
40
5
VDS = 6 V
20
IDQ = 400 mA
Pin = 20 dBm
00
450 470 490 510 530 550
Frequency f (MHz)
Power Gain, Power Added Efficiency
vs. Drain to Source Voltage
20 80
PG
15 70
PAE
10 60
5 50
f = 520 MHz
IDQ = 400 mA
Pin = 20 dBm
0 40
45678
Drain to Source Voltage VDS (V)
Power Gain, Power Added Efficiency
vs. Input Power
40 80
PAE
30 60
20 40
PG
10
VDS = 6 V
20
f = 520 MHz
IDQ = 400 mA
00
0 5 10 15 20 25
Input Power Pin (dBm)
Input Return Loss vs. Frequency
0
-2
-4
-6
-8
VDS = 6 V
-10 IDQ = 400 mA
Pin = 20 dBm
-12
450 470 490 510 530
Frequency f (MHz)
550
Power Gain, Power Added Efficiency
vs. Idling Current
20 80
PG
15 70
PAE
10 60
5
VDS = 6 V
50
f = 520 MHz
Pin = 20 dBm
0 40
0 0.2 0.4 0.6 0.8 1
Idling Current IDQ (A)
REJ03G1569-0100 Rev.1.00 Jul 04, 2007
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RQA0008NXAQS.PDF ] |
Número de pieza | Descripción | Fabricantes |
RQA0008NXAQS | Silicon N-Channel MOS FET | Renesas Technology |
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