DataSheet39.com

What is EIC1213-8?

This electronic component, produced by the manufacturer "Excelics Semiconductor", performs the same function as "9.50-10.50 GHz 25-Watt Internally Matched Power FET".


EIC1213-8 Datasheet PDF - Excelics Semiconductor

Part Number EIC1213-8
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET
Manufacturers Excelics Semiconductor 
Logo Excelics Semiconductor Logo 


There is a preview and EIC1213-8 download ( pdf file ) link at the bottom of this page.





Total 2 Pages



Preview 1 page

No Preview Available ! EIC1213-8 datasheet, circuit

www.DataSheet4U.com
ISSUED 3-19-09
EIC1213-8
12.75-13.25 GHz 8-Watt Internally Matched Power FET
FEATURES
12.75– 13.25 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
28% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.827±.010 .669
Excelics
EIC1213-8
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP
P1dB
G1dB
G
IMD3
PAE
Output Power at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ 2200mA
Gain at 1dB Compression
f = 12.75-13.25GHz
VDS = 10 V, IDSQ 2200mA
Gain Flatness
f = 12.75-13.25GHz
VDS = 10 V, IDSQ 2200mA
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 28.0 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 13.25 GHz
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 2200mA
f = 12.75-13.25GHz
38.5
5.5
-41
39
6.5
-45
28
Id1dB
Drain Current at 1dB Compression
f = 12.75-13.25GHz
2200
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
3.8
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
-2.5
3.5
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
3) Overall Rth depends on case mounting.
MAX
±0.6
2600
4.6
-4.0
3.8
UNITS
dBm
dB
dB
dBc
%
mA
A
V
oC/W
MAXIMUM RATING AT 25°C1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
15
-5
35dBm
175 oC
-65 to +175 oC
39.5W
CONTINUOUS2
10V
-4V
@ 3dB Compression
175 oC
-65 to +175 oC
39.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revision A1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EIC1213-8 electronic component.


Information Total 2 Pages
Link URL [ Copy URL to Clipboard ]
Download [ EIC1213-8.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
EIC1213-12The function is 12.75-13.25 GHz 12-Watt Internally Matched Power FET. Excelics SemiconductorExcelics Semiconductor
EIC1213-4The function is Internally Matched Power FET. Excelics SemiconductorExcelics Semiconductor
EIC1213-8The function is 9.50-10.50 GHz 25-Watt Internally Matched Power FET. Excelics SemiconductorExcelics Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

EIC1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search