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PDF FDS4897C Data sheet ( Hoja de datos )
| Número de pieza | FDS4897C | |
| Descripción | Dual N & P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
November 2005
FDS4897C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
• Inverter
• Power Supplies
Features
• Q1: N-Channel
6.2A, 40V
RDS(on) = 29mΩ @ VGS = 10V
RDS(on) = 36mΩ @ VGS = 4.5V
• Q2: P-Channel
–4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V
RDS(on) = 63mΩ @ VGS = –4.5V
• High power handling capability in a widely used
surface mount package
• RoHS compliant
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4897C
FDS4897C
13”
©2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
Q1 Q2
40 40
±20 ±20
6.2 –4.4
20 –20
2
1.6
1
0.9
–55 to +150
Units
V
V
A
W
°C
78
40
Tape width
12mm
°C/W
°C/W
Quantity
2500 units
www.fairchildsemi.com
1 page  
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Typical Characteristics: Q1 (N-Channel)
10
ID = 7A
8
6
VDS = 10V
30V
20V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100μs
1ms
10ms
100ms
1s
10s
DC
0.1 VGS = 10.0V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
600
f = 1 MHz
VGS = 0 V
Ciss
400
200
Crss
0
0
5
Coss
10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
35
40
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
50
SINGLE PULSE
RθJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 11. Single Pulse Maximum Peak
Current.
FDS4897C Rev C(W)
100
TJ = 25oC
10
1
0.01
0.1 1
tAV, TIME IN AVANCHE(ms)
10
Figure 12. Unclamped Inductive Switching
Capability.
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDS4897C.PDF ] | |
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