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PDF STE140NF20D Data sheet ( Hoja de datos )
| Número de pieza | STE140NF20D | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Features
STE140NF20D
N-channel 200 V, 0.010 Ω, 140 A, ISOTOP
STripFET™ II with fast recovery diode Power MOSFET
Preliminary Data
Type
STE140NF20D
VDSS
200 V
RDS(on) max
ID
< 0.012 Ω 140 A
■ Exceptional dv/dt capability
■ Low gate charge
■ 100% avalanche tested
Application
■ Switching applications
Description
This Power MOSFET is produced using
STMicroelectronics’ unique STripFET™ process,
which is specifically designed to minimize input
capacitance and gate charge. The
STE140NF20D offers extremely fast switching
performance thanks to the instrinsic fast body
diode, making the device ideal for hard switching
topologies.
ISOTOP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STE140NF20D
Marking
140NF20D
Package
ISOTOP
Packaging
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 100 V, ID= 70 A,
RG=4.7 Ω, VGS =10 V
(see Figure 2)
Min. Typ. Max. Unit
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 70 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 70 A,
di/dt = 100 A/µs,
VDD= 100 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
TBD
TBD
TBD
140
560
1.6
A
A
V
ns
nC
A
5/10
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STE140NF20D.PDF ] | |
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