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부품번호 | STP140N10F4 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 13 페이지수
www.DataSheet4U.com
STB140N10F4, STF140N10F4
STP140N10F4
N-channel 100 V, 5.2 mΩ, 60 A TO-220, D2PAK, TO-220FP
STripFET™ DeepGATE™ Power MOSFET
Preliminary Data
Features
Type
STB140N10F4
STF140N10F4
STP140N10F4
VDSS
100 V
100 V
100 V
RDS(on) max
< 6.5 mΩ
< 6.5 mΩ
< 6.5 mΩ
ID
140 A
55 A
140 A
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested
Application
■ Switching applications
Description
This Power MOSFET is among the latest
developments that use an advanced technology
(STripFET™ DeepGATE™ technology), which
has been especially tailored to minimize on-state
resistance, provide superior switching
performance and withstand high energy pulse in
avalanche and commutation mode. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
D²PAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB140N10F4
STF140N10F4
STP140N10F4
Marking
140N10F4
140N10F4
140N10F4
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
January 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/13
www.st.com
13
www.DataSEhleeect4tUri.ccoaml characteristics
STB140N10F4, STF140N10F4, STP140N10F4
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS Breakdown voltage
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 250 µA, VGS = 0
100
VDS = max rating
VDS = max rating,TC=125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
2
VGS = 10 V, ID = 30 A
5.2
V
1 µA
100 µA
100 nA
4V
6.5 mΩ
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Table 6. Switching times
Symbol
Parameter
VDS = 25 V, f = 1 MHz,
VGS = 0
VDD = 80 V, ID = 60 A,
VGS = 10 V
(see Figure 3)
8980
750
300
140
TBD
TBD
pF
pF
pF
nC
nC
nC
Test conditions
Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
VDD = 50 V, ID = 30 A
RG = 4.7 Ω VGS = 10 V
(see Figure 2)
VDD = 50 V, ID = 30 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
TBD
TBD
TBD
TBD
ns
ns
ns
ns
4/13
4페이지 www.DataSShTeeBt41U4.0coNm10F4, STF140N10F4, STP140N10F4
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
7/13
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STP140N10F4 | Power MOSFET ( Transistor ) | STMicroelectronics |
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