Datasheet.kr   

74AUP1G08 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 74AUP1G08은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 74AUP1G08 자료 제공

부품번호 74AUP1G08 기능
기능 Low-power 2-input AND gate
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


74AUP1G08 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 17 페이지수

미리보기를 사용할 수 없습니다

74AUP1G08 데이터시트, 핀배열, 회로
www.DataSheet4U.com
74AUP1G08
Low-power 2-input AND gate
Rev. 02 — 29 June 2006
Product data sheet
1. General description
The 74AUP1G08 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G08 provides the single 2-input AND function.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-C Class 3A. Exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from 40 °C to +85 °C and 40 °C to +125 °C




74AUP1G08 pdf, 반도체, 판매, 대치품
www.DPahtaSilhiepest4US.ceommiconductors
74AUP1G08
Low-power 2-input AND gate
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
IIK
VI
IOK
VO
IO
ICC
IGND
Tstg
Ptot
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
VI < 0 V
VO > VCC or VO < 0 V
Active mode and Power-down mode
VO = 0 V to VCC
Tamb = 40 °C to +125 °C
0.5
-
[1] 0.5
-
[1] 0.5
-
-
-
65
[2] -
+4.6
50
+4.6
±50
+4.6
±20
+50
50
+150
250
V
mA
V
mA
V
mA
mA
mA
°C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Tamb
t/V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
input transition rise and fall rate VCC = 0.8 V to 3.6 V
Min Max Unit
0.8 3.6 V
0 3.6 V
0
VCC
V
0 3.6 V
40 +125 °C
0 200 ns/V
74AUP1G08_2
Product data sheet
Rev. 02 — 29 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4 of 17

4페이지










74AUP1G08 전자부품, 판매, 대치품
www.DPahtaSilhiepest4US.ceommiconductors
74AUP1G08
Low-power 2-input AND gate
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = 40 °C to +125 °C
VIH HIGH-state input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.75 × VCC -
0.70 × VCC -
VCC = 2.3 V to 2.7 V
1.6 -
VCC = 3.0 V to 3.6 V
2.0 -
VIL LOW-state input voltage VCC = 0.8 V
--
VCC = 0.9 V to 1.95 V
--
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
--
--
VOH HIGH-state output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VCC 0.11 -
0.6 × VCC -
0.93 -
1.17 -
1.77 -
1.67 -
2.40 -
2.30 -
VOL LOW-state output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
--
IO = 1.9 mA; VCC = 1.65 V
--
IO = 2.3 mA; VCC = 2.3 V
--
IO = 3.1 mA; VCC = 2.3 V
--
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
--
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC 0.6 V; IO = 0 A;
VCC = 3.3 V
-
[1] -
-
-
[1] One input at VCC 0.6 V, other input at VCC or GND.
Max Unit
-V
-V
-V
-V
0.25 × VCC V
0.30 × VCC V
0.7 V
0.9 V
-V
-V
-V
-V
-V
-V
-V
-V
0.11 V
0.33 × VCC V
0.41 V
0.39 V
0.36 V
0.50 V
0.36 V
0.50 V
±0.75
µA
±0.75
µA
±0.75
µA
1.4 µA
75 µA
74AUP1G08_2
Product data sheet
Rev. 02 — 29 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
7 of 17

7페이지


구       성 총 17 페이지수
다운로드[ 74AUP1G08.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
74AUP1G00

Low-power 2-input NAND gate

NXP Semiconductors
NXP Semiconductors
74AUP1G00

SINGLE 2 INPUT POSITIVE NAND GATE

Diodes
Diodes

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵