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부품번호 | 74AUP1G08 기능 |
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기능 | Low-power 2-input AND gate | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 17 페이지수
www.DataSheet4U.com
74AUP1G08
Low-power 2-input AND gate
Rev. 02 — 29 June 2006
Product data sheet
1. General description
The 74AUP1G08 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP1G08 provides the single 2-input AND function.
2. Features
s Wide supply voltage range from 0.8 V to 3.6 V
s High noise immunity
s Complies with JEDEC standards:
x JESD8-12 (0.8 V to 1.3 V)
x JESD8-11 (0.9 V to 1.65 V)
x JESD8-7 (1.2 V to 1.95 V)
x JESD8-5 (1.8 V to 2.7 V)
x JESD8-B (2.7 V to 3.6 V)
s ESD protection:
x HBM JESD22-A114-C Class 3A. Exceeds 5000 V
x MM JESD22-A115-A exceeds 200 V
x CDM JESD22-C101-C exceeds 1000 V
s Low static power consumption; ICC = 0.9 µA (maximum)
s Latch-up performance exceeds 100 mA per JESD 78 Class II
s Inputs accept voltages up to 3.6 V
s Low noise overshoot and undershoot < 10 % of VCC
s IOFF circuitry provides partial Power-down mode operation
s Multiple package options
s Specified from −40 °C to +85 °C and −40 °C to +125 °C
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74AUP1G08
Low-power 2-input AND gate
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
IIK
VI
IOK
VO
IO
ICC
IGND
Tstg
Ptot
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
VI < 0 V
VO > VCC or VO < 0 V
Active mode and Power-down mode
VO = 0 V to VCC
Tamb = −40 °C to +125 °C
−0.5
-
[1] −0.5
-
[1] −0.5
-
-
-
−65
[2] -
+4.6
−50
+4.6
±50
+4.6
±20
+50
−50
+150
250
V
mA
V
mA
V
mA
mA
mA
°C
mW
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Tamb
∆t/∆V
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
output voltage
Active mode
ambient temperature
Power-down mode; VCC = 0 V
input transition rise and fall rate VCC = 0.8 V to 3.6 V
Min Max Unit
0.8 3.6 V
0 3.6 V
0
VCC
V
0 3.6 V
−40 +125 °C
0 200 ns/V
74AUP1G08_2
Product data sheet
Rev. 02 — 29 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4 of 17
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74AUP1G08
Low-power 2-input AND gate
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ
Tamb = −40 °C to +125 °C
VIH HIGH-state input voltage
VCC = 0.8 V
VCC = 0.9 V to 1.95 V
0.75 × VCC -
0.70 × VCC -
VCC = 2.3 V to 2.7 V
1.6 -
VCC = 3.0 V to 3.6 V
2.0 -
VIL LOW-state input voltage VCC = 0.8 V
--
VCC = 0.9 V to 1.95 V
--
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
--
--
VOH HIGH-state output voltage VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VCC − 0.11 -
0.6 × VCC -
0.93 -
1.17 -
1.77 -
1.67 -
2.40 -
2.30 -
VOL LOW-state output voltage VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
IO = 1.1 mA; VCC = 1.1 V
--
IO = 1.7 mA; VCC = 1.4 V
--
IO = 1.9 mA; VCC = 1.65 V
--
IO = 2.3 mA; VCC = 2.3 V
--
IO = 3.1 mA; VCC = 2.3 V
--
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
--
--
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
IOFF
∆IOFF
power-off leakage current
additional power-off
leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
-
-
ICC
∆ICC
supply current
additional supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
[1] -
-
-
[1] One input at VCC − 0.6 V, other input at VCC or GND.
Max Unit
-V
-V
-V
-V
0.25 × VCC V
0.30 × VCC V
0.7 V
0.9 V
-V
-V
-V
-V
-V
-V
-V
-V
0.11 V
0.33 × VCC V
0.41 V
0.39 V
0.36 V
0.50 V
0.36 V
0.50 V
±0.75
µA
±0.75
µA
±0.75
µA
1.4 µA
75 µA
74AUP1G08_2
Product data sheet
Rev. 02 — 29 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |