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부품번호 | NX5322 기능 |
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기능 | FTTH InGaAsP MQW-FP LASER DIODE | ||
제조업체 | NEC | ||
로고 | |||
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DATA SHEET
LASER DIODE
NX5322 Series
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s,
InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5322 Series is a 1 310 nm Multiple Quantum Well (MQW)
structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
devices are designed for application up to 1.25 Gb/s.
APPLICATIONS
• STM-1 (L-1.1), STM-4 (S-4.1), ITU-T recommendations
• FTTH (Fiber To The Home) system
FEATURES
• Optical output power
Po = 5.0 mW
• Low threshold current
lth = 7 mA
• Differential Efficiency
ηd = 0.45 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
6.35 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PL10740EJ02V0DS (2nd edition)
Date Published April 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2008, 2009
www.DataSheet4U.com
NX5322 Series
ABSOLUTE MAXIMUM RATINGS
<R>
Parameter
Optical Output Power
Forward Current of LD
Reverse Voltage of LD
Forward Current of PD
Reverse Voltage of PD
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
Relative Humidity (noncondensing)
Symbol
Po
IF
VR
IF
VR
TC
Tstg
Tsld
RH
Ratings
10
150
2.0
10
15
−40 to +85
−40 to +85
350 (3 sec.)
85
Unit
mW
mA
V
mA
V
°C
°C
°C
%
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Parameter
Operating Voltage
Threshold Current
Differential Efficiency
Center Wavelength
Spectral Width
Rise Time
Fall Time
Monitor Current
Monitor Dark Current
Monitor PD Terminal Capacitance
Focal Distance
Symbol
Conditions
Vop Po = 5.0 mW
Ith
ηd
λC Po = 5.0 mW, RMS (−20 dB)
σ Po = 5.0 mW, RMS (−20 dB)
tr 10-90%
tf 90-10%
Im VR = 1.5 V, Po = 5.0 mW
ID VR = 10 V
Ct VR = 10 V, f = 1 MHz
Df Po = 5.0 mW
MIN.
3
0.35
1 290
100
5.85
TYP.
1.1
7
0.45
1 310
1.0
0.15
0.15
300
5
6.35
MAX.
1.5
15
1 330
2.0
0.3
0.3
900
10
20
6.85
Unit
V
mA
W/A
nm
nm
ns
ns
μA
nA
pF
mm
4 Data Sheet PL10740EJ02V0DS
4페이지 www.DataSheet4U.com
NX5322 Series
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
Warning Laser Beam
Caution GaAs Products
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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부품번호 | 상세설명 및 기능 | 제조사 |
NX5320EH | 1 310nm AlGaInAs MQW-FP LASER DIODE | California Eastern Labs |
NX5321 | FTTH InGaAsP MQW-FP LASER DIODE | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |