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부품번호 | UPA1793 기능 |
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기능 | SWITCHING N- AND P-CHANNEL POWER MOS FET | ||
제조업체 | NEC | ||
로고 | |||
전체 12 페이지수
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1793
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA1793 is N- and P-Channel MOS Field Effect Transistors
designed for Motor Drive application.
FEATURES
• Low on-state resistance
N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)
P-Channel RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
• Low input capacitance
N-Channel Ciss = 160 pF TYP.
P-Channel Ciss = 370 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1793G
Power SOP8
Gate
PACKAGE DRAWING (Unit: mm)
85
14
5.37 Max.
N-Channel 1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
P-Channel 3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVALENT CIRCUIT
Drain
Drain
Body
Diode
Gate
Body
Diode
Gate
Protection
Diode
Source
N-Channel
Gate
Protection
Diode
Source
P-Channel
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
µPA1793
B) P-Channel
www.DataSheet4U.com
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Conditions
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
VDS = –20 V, VGS = 0 V
VGS = m 12 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –1.5 A
VGS = –4.5 V, ID = –1.5 A
VGS = –4.0 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.0 A
VDS = –10 V
VGS = 0 V
f = 1 MHz
VDD = –10 V, ID = –1.5 A
VGS = –4.0 V
RG = 10 Ω
VDD = –10 V
VGS = –4.0 V
ID = –3.0 A
IF = 3.0 A, VGS = 0 V
trr IF = 3 A, VGS = 0 V
Qrr di/dt = 10 A/µs
MIN. TYP. MAX. Unit
–10 µA
m 10 µA
–0.5 –1.0 –1.5 V
1.0 S
75 115 mΩ
80 120 mΩ
116 190 mΩ
370 pF
110 pF
40 pF
120 ns
260 ns
410 ns
360 ns
3.4 nC
1.3 nC
1.6 nC
0.86 V
24 ns
1.5 nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1µs
Duty Cycle ≤ 1%
RL
VDD
VGS (−)
VGS
Wave Form
10%
0
VDS (−)
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = −2 mA
PG. 50 Ω
RL
VDD
4 DataSheet G16059EJ1V0DS
4페이지 A) N-Channel
www.DataSheet4U.com
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
150
100
VGS = 2.5 V
4.0 V
50 4.5 V
0
-50
Pulsed
0 50 100
Tch - Channel Temperature - °C
150
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
100
C iss
C oss
C rss
10
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 50 A/µs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
µPA1793
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 4.5 V
1
0V
0.1
0.01
0
Pulsed
0.5 1
VF(S-D) - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1000
100
10
td(off)
tf
tr
td(on)
VDD = 10 V
VGS = 4 V
RG = 10 Ω
1
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERITICS
20 5
16 VDD = 16 V
10 V
4V
12
VGS
8
4
3
2
41
VDS
ID = 3 A
00
01234
QG - Gate Charge - nC
DataSheet G16059EJ1V0DS
7
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부품번호 | 상세설명 및 기능 | 제조사 |
UPA1790 | SWITCHING N-AND P-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
UPA1792 | SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |