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부품번호 | PESD5V0V4UW 기능 |
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기능 | Very low capacitance unidirectional quadruple ESD protection diode arrays | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
www.DataSheet4U.com
PESDxV4UF; PESDxV4UG;
PESDxV4UW
Very low capacitance unidirectional quadruple ESD
protection diode arrays
Rev. 03 — 28 January 2008
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to
protect up to four signal lines from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD3V3V4UF
SOT886
PESD5V0V4UF
SOT886
PESD3V3V4UG
SOT353
PESD5V0V4UG
SOT353
PESD3V3V4UW
SOT665
PESD5V0V4UW
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
Package configuration
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
1.2 Features
I ESD protection of up to four lines
I Very low diode capacitance
I Max. peak pulse power: PPP = 16 W
I Low clamping voltage: VCL = 11 V
I Ultra low leakage current: IRM = 25 nA
I ESD protection up to 12 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 1.5 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
www.DNatXaSPheSete4Um.coicmonductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
Table 7. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
Min
IEC 61000-4-2
(contact discharge)
[1][2][3] -
MIL-STD-883 (human
body model)
-
[1] Device stressed with ten non-repetitive ESD pulses.
[2] For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
[3] For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
Max Unit
12 kV
10 kV
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 8 kV (contact)
> 4 kV
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
e−t
50 % IPP; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESDXV4UF_G_W_3
Product data sheet
Rev. 03 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
4 of 16
4페이지 www.DNatXaSPheSete4Um.coicmonductors
PESDxV4UF/G/W
Very low capacitance quadruple ESD protection diode arrays
16
Cd
(pF)
14
006aaa262
12
(1)
10
(2)
8
6
012345
VR (V)
f = 1 MHz; Tamb = 25 °C
(1) PESD3V3V4UF; PESD3V3V4UG; PESD3V3V4UW
(2) PESD5V0V4UF; PESD5V0V4UG; PESD5V0V4UW
Fig 5. Diode capacitance as a function of reverse
voltage; typical values
10
IRM
IRM(25 °C)
1
006aaa263
10−1
−100
−50
0
50 100 150
Tj (°C)
Fig 6. Relative variation of reverse leakage current as
a function of junction temperature; typical
values
I
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
−IPP
Fig 7. V-I characteristics for a unidirectional ESD protection diode
006aaa407
PESDXV4UF_G_W_3
Product data sheet
Rev. 03 — 28 January 2008
© NXP B.V. 2008. All rights reserved.
7 of 16
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PESD5V0V4UF | Very low capacitance unidirectional quadruple ESD protection diode arrays | NXP Semiconductors |
PESD5V0V4UG | Very low capacitance unidirectional quadruple ESD protection diode arrays | NXP Semiconductors |
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