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부품번호 PESD5V0V1BB 기능
기능 Very low capacitance bidirectional ESD protection diodes
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PESD5V0V1BB 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PESD5V0V1BA; PESD5V0V1BB;
PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 01 — 28 July 2009
Product data sheet
1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0V1BA
SOD323
PESD5V0V1BB
SOD523
PESD5V0V1BL
SOD882
JEITA
SC-76
SC-79
-
Package configuration
very small
ultra small and flat lead
leadless ultra small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 30 kV
I Very low diode capacitance: Cd = 11 pF I IEC 61000-4-2; level 4 (ESD)
I Max. peak pulse power: PPP = 45 W
I Low clamping voltage: VCL = 12.5 V
I IEC 61000-4-5 (surge); IPP = 4.8 A
I AEC-Q101 qualified
I Ultra low leakage current: IRM < 1 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Subscriber Identity Module (SIM) card
protection
I Communication systems
I Portable electronics
I 10/100 Mbit/s Ethernet
I FireWire
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 11 13 pF




PESD5V0V1BB pdf, 반도체, 판매, 대치품
www.DNatXaSPheSete4Um.coicmonductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VRWM
IRM
VBR
Cd
VCL
rdif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
VRWM = 5 V
IR = 5 mA
f = 1 MHz;
VR = 0 V
IPP = 4.8 A
IR = 5 mA
--5
- < 1 10
5.8 6.8 7.8
- 11 13
[1] - - 12.5
- - 35
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Unit
V
nA
V
pF
V
103
PPP
(W)
102
006aab606
1.2
PPP
PPP(25°C)
0.8
001aaa193
10 0.4
1
1 10 102 103
tp (µs)
0
0 50 100 150 200
Tj (°C)
Fig 3.
Tamb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0V1BA_BB_BL_1
Product data sheet
Rev. 01 — 28 July 2009
© NXP B.V. 2009. All rights reserved.
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PESD5V0V1BB 전자부품, 판매, 대치품
www.DNatXaSPheSete4Um.coicmonductors
PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
7. Application information
The PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 µs
waveform.
line to be protected
PESD5V0V1Bx
GND
006aab610
Fig 9. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0V1BA_BB_BL_1
Product data sheet
Rev. 01 — 28 July 2009
© NXP B.V. 2009. All rights reserved.
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PESD5V0V1BA

Very low capacitance bidirectional ESD protection diodes

NXP Semiconductors
NXP Semiconductors
PESD5V0V1BB

Very low capacitance bidirectional ESD protection diodes

NXP Semiconductors
NXP Semiconductors

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