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PDF SIR472DP Data sheet ( Hoja de datos )
| Número de pieza | SIR472DP | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
SiR472DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.012 at VGS = 10 V
0.015 at VGS = 4.5 V
PowerPAK SO-8
ID (A)a, g
20
20
Qg (Typ.)
6.8 nC
6.15 mm
S
1S
5.15 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: SiR472DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
RoHS
COMPLIANT
Package with Low 1.07 mm Profile
• Optimized for High-Side Synchronous Rectifier
Operation
• 100 % Rg Tested
• 100 % UIS Tested
D
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
30
± 20
20g
20g
14b, c
11b, c
50
20g
3.2b, c
22
24
29.8
19.0
3.9b, c
2.5b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
27
3.5
Maximum
32
4.2
Unit
°C/W
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
www.DataSisheneott4rUeq.cuoirmed to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package Limited.
Document Number: 68897
S-82488-Rev. C, 13-Oct-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
45
SiR472DP
Vishay Siliconix
36
27
Package Limited
18
9
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
40 2.5
2.0
30
1.5
20
1.0
10
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
0.0
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.DataSheet4U.com
Document Number: 68897
S-82488-Rev. C, 13-Oct-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SIR472DP.PDF ] | |
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