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PDF AGR09030E Data sheet ( Hoja de datos )
| Número de pieza | AGR09030E | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
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AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications. This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver-
ing a minimum output power of 30 W, it is ideally
suited for today's RF power amplifier applications.
AGR09030EU (unflanged) AGR09030EF (flanged)
Figure 1. Available Packages
Features
www.DataSheet4U.com
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traffic codes 8—13:
— Output power (POUT): 7 W.
— Power gain: 21 dB.
— Efficiency: 27%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1.98 MHz offset: –60 dBc).
— Input return loss: 10 dB.
High-reliability, gold-metalization process.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
30 W minimum output power.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09030EU
AGR09030EF
Sym
R JC
R JC
Value
1.85
2.2
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65 Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Drain Current—Continuous
ID 4.25 Adc
Total Dissipation at TC = 25 °C:
AGR09030EU
PD 95 W
AGR09030EF
PD 80 W
Derate Above 25 °C:
AGR09030EU
— 0.54 W/°C
AGR09030EF
— 0.45 W/°C
Operating Junction Tempera- TJ
200 °C
ture
Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09030E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, asussreemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes D(EeOviSc)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
0
-10
-20
-30 FREQUENCY = 880 MHz
ACP+
-40 ACP-
-50 ACP1+
ACP1-
-60
-70
-80
0
5 10 15
POUT (W)X
20
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C.
IS-95 CDMA PILOT, PAGING, SYNC, TRAFFIC CODES 8—13. OFFSET 1 = 750 kHz, 30 kHz BW. OFFSET 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
23 0.0
22
POWER GAIN
POUT = 5 W
-2.0
21
www.DataShe2e0t4U.com
19
18
17
POUT = 40 W
-4.0
-6.0
-8.0
16 -10.0
15
14
RETURN LOSS
-12.0
13 -14.0
12
11 -16.0
10 -18.0
860 865 870 875 880 885 890 895 900
FREQUENCY (MHz)X
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Return Loss vs. Frequency
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