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PDF AGR09070EF Data sheet ( Hoja de datos )
| Número de pieza | AGR09070EF | |
| Descripción | Lateral MOSFET | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09070EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured on an advanced LDMOS technology,
offering state-of-the-art performance and reliability.
Packaged in an industry-standard package and
capable of delivering a minimum output power of
70 W, it is ideally suited for today's wireless base
station RF power amplifier applications.
Figure 1. AGR09070EF (flanged) Package
Features
www.DataShTeyept4icUa.cl opmerformance ratings for GSM EDGE
(f = 941 MHz, POUT = 21 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
Typical performance over entire GSM band:
— P1dB: 85 W typ.
— Power gain: @ P1dB = 18.25 dB.
— Efficiency @ P1dB = 56% typ.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
70 W minimum output power.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09070EF
Sym
R JC
Value
0.80
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value Unit
Drain-source Voltage
VDSS 65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Drain Current—Continuous ID 8.5 Adc
Total Dissipation at TC = 25 °C:
AGR09070EF
PD 219 W
Derate Above 25 C:
AGR09070EF
— 1.25 W/°C
Operating Junction Tempera- TJ 200 °C
ture
Storage Temperature Range TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09070EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PAEgeArKe Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
1 page  
AGR09070EF
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
20.0 AGR09070EF; VDD = 26 V; FREQUENCY = 940.5 MHz
TYPICAL DATA
19.5
IDQ = 1000 mA
IDQ = 1100 mA
19.0
18.5
18.0
17.5
IDQ = 900 mA
IDQ = 800 mA
IDQ = 700 mA
17.0
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105
POUT (W)Z
Figure 4. Power Gain vs. POUT
-30 AGR09070EF; FREQUENCY = 940.5 MHz
VDD = 26 V; IDQ = 800 mA
-40
www.DataSheet4U.com
-50
EDGE FORMAT: 3GPP GSM 05.05
RES BW: 30 kHz
VIDEO BW: 300 Hz
-60
±400 kHz
TYPICAL DATA
-70
-80
±600 kHz
-90
-100
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
POUT (dBm)Z
Figure 5. Modulation Spectrum vs. POUT
5 Page | ||
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| PDF Descargar | [ Datasheet AGR09070EF.PDF ] | |
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