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AGR19030EF 데이터시트 PDF




TriQuint Semiconductor에서 제조한 전자 부품 AGR19030EF은 전자 산업 및 응용 분야에서
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AGR19030EF 데이터시트, 핀배열, 회로
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel later-
ally diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
GSM Features
Typical performance over entire GSM band:
— P1dB: 30 W typical.
— Continuous wave (CW) power gain: @ P1dB =
15 dB.
— CW efficiency @ P1dB = 55% typical.
— Return loss: –12 dB.
Device Performance Features
Figure 1. AGR19030EF (flanged) Package
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 350 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
www.DataSheraett4ioU.(cAoCmPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 6 W.
— Power gain: 16 dB.
— Efficiency: 24.8%.
— IM3: –34.5 dBc.
— ACPR: –49 dBc.
EDGE Features
Typical EDGE performance, 1960 MHz, 26 V,
IDQ = 250 mA:
— Output power (POUT): 12 W typical.
— Power gain: 15.5 dB.
— Efficiency: 38% typical.
— Modulation spectrum:
@ ±400 kHz = –61 dBc.
@ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.2%
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 30 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19030EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
dtaukreinngtoallahvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPsAtEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.




AGR19030EF pdf, 반도체, 판매, 대치품
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19030EF
VGG
+
C1 C2 C3 C4
FB1
R1
Z11 C5
Z1 Z2 C6 Z3 Z4 Z5
RF INPUT C7
VDD
+ ++
C22 C23 C12 C13 C14 C15 C16 C17 C18 C19
Z12
Z7
Z6 2 1
DUT
3
Z8 Z9 C20 Z10
RF OUTPUT
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
www.DataSheet4U.com
23 1
B. Component Layout
Parts List:
Microstrip line: Z1, 0.315 in. x 0.067 in.; Z2, 0.195 in. x 0.067 in.; Z3, 0.345 in. x 0.067 in.; Z4, 0.230 in. x 0.260 in.; Z5, 0.200 in. x 0.160 in.;
Z6, 0.395 in. x 0.675 in.; Z7, 0.355 in. x 0.640 in.; Z8, 0.645 in. x 0.130 in.; Z9, 0.145 in. x 0.067 in.; Z10, 0.535 in. x 0.067 in;
Z11, 0.345 in. x 0.030 in; Z12, 0.275 in. x 0.050 in.
ATC® B case chip capacitors: C5, C22: 8.2 pF 100B8R2JCA500X; C6, C20: 10 pF 100B100JCA500X; C12: 100 pF 102B100JCA500X;
C13: 1000 pF 103B100JCA500X.
Kemet® B case chip capacitors: C2, C16: 0.10 µF CDR33VX104AKWS; tantalum capacitor: C17: 1 µF 50 V T491C.
Vitramon® 1206: C4, C14: 22000 µF.
Sprague® tantalum SMT (35 V): C1, C19, C23: 22 µF; C18: 10 µF.
Murata® 0805: C3, C15: 0.01 µF, GRM40X7R103K100AL.
Johanson Giga-Trim® variable capacitors: C7, 0.4 pF—2.5 pF.
Fair-Rite® ferrite bead: FB1: 2743019447.
Fixed film chip resistor: R1: 12 , 0.25 W, 0.08 x 0.13.
PCB etched circuit boards
εTaconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
Figure 2. AGR19030EF Test Circuit

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AGR19030EF 전자부품, 판매, 대치품
AGR19030EF
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60 -10
55
50 -20
45 IM3
40 GPS -30
35
30 -40
25
20 -50
15
10 Ƨ -60
5 ACP
0 -70
30 35 40 45
POUT (W)Z
Test Conditions:
VDD = 28 Vdc, IDQ = 350 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3 Power Gain, and Drain Efficiency vs. POUT
18
www.DataSheet4U.com 17 IDQ = 450 mA
IDQ = 400 mA
16 IDQ = 350 mA
IDQ = 300 mA
15 IDQ = 250 mA
14
13
25 30 35 40
POUT (dBm)Z
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
45

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AGR19030EF

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