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부품번호 | AGR19060E 기능 |
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기능 | Transistor | ||
제조업체 | TriQuint Semiconductor | ||
로고 | |||
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
AGR19060EU (unflanged) AGR19060EF (flanged)
Figure 1. Available Packages
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 700 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
mission bandwidth (BW). Adjacent channel power
www.DataShreaetti4oU(.cAoCmPR) measured over 30 kHz BW at f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation distortion (IM3) measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 12 W.
— Power gain: 15.5 dB.
— Efficiency: 23.5%.
— IM3: –36 dBc.
— ACPR: –50.5 dBc.
EDGE Features
Typical EDGE performance (1960 MHz, 26 V,
IDQ = 500 mA):
— Output power (POUT): 25 W.
— Power gain: 15.3 dB.
— Efficiency: 37%.
— Modulation spectrum:
@ ±400 kHz = –61.0 dBc.
@ ±600 kHz = –74.0 dBc.
— Error vector magnitude (EVM) = 2.5%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 60 W typical.
— Continuous wave (CW) power gain: @ P1dB =
14.5 dB.
— CW efficiency @ P1dB = 53% typical.
— Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 60 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19060E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
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employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19060E
VGG
R1
R2
C2 C1
C11
C13
R3
FB1
C3
Z13
VDD
+ ++
Z14 C12 C6 C7 C8 C9
C18 C10
Z1
RF INPUT
C5
Z2 C4 Z3 Z4 Z5 2 1 Z6 Z7 Z8 Z9 Z10 Z11 C16 Z12
3
RF
C17 OUTPUT
DUT
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
Gate
Gnd Drain
www.DataSheet4U.com
C2
R2 R1
R3
C11 FB1
C1 C13
C4
C5
C12
C3 C8 C9 C18 C10
C6 C7
S1 S2
C16
C17
B. Component Layout
Parts List:
■ Microstrip line: Z1 0.330 in. x 0.065 in.; Z2 0.470 in. x 0.065 in.; Z3 0.175 in. x 0.065 in.; Z4 0.260 in. x 0.270 in.; Z5 0.410 in. x 0.840 in.;
Z6 0.260 in. x 0.970 in.; Z7 0.105 in. x 0.400 in.; Z8 0.330 in. x 0.560 in.; Z9 0.165 in. x 0.240 in.; Z10 0.315 in. x 0.065 in.;
Z11 0.260 in. x 0.065 in.; Z12 0.255 in. x 0.065 in.; Z13 0.440 in. x 0.030 in.; Z14 0.695 in. x 0.050 in.
■ ATC® B case chip capacitors: C3, C6: 8.2 pF, 100B8R2JCA500X; C4, C16: 10 pF, 100B100JCA500X; C7: 1000 pF, 100B102JCA500X.
■ Kemet® B case chip capacitors: C9, C11: 0.10 µF, CDR33BX104AKWS.
■ Johanson Giga-Trim® variable capacitors: C5, C17: 0.4 pF—2.5 pF.
■ Vitramon® 1206: C2, C8: 22000 pF.
■ Murata® 0805: C13: 0.01 µF, GRM40X7R103K100AL.
■ Fair-Rite® ferrite bead: FB1, #2743019447.
■ Sprague® tantalum, SMT, 35 V: C1, C10, C12: 22 µF; C18: 10 µF.
■ Fixed film chip resistors, 0.25 W, 0.08 x 0.13: R1 510 Ω; R2 560 kΩ; R3 4.7 Ω.
■ PCB etched circuit boards.
ε■ Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
Figure 2. AGR19060E Test Circuit Schematic
4페이지 AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60
55
50
45
40
35
30
25
20
15
10
5
0
1
10
POUT (W)Z
IM3
ACP
GPS
-10
-20
-30
-40
-50
-60
-70
100
Test Conditions:
VDD = 28 Vdc, IDQ = 700 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT
17
IDQ = 800 mA
16
IDQ = 700 mA
IDQ = 600 mA
www.DataSheet4U.com
15
14
13
IDQ = 300 mA
IDQ = 400 mA
IDQ = 500 mA
12
1
10
POUT (W)
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
100
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부품번호 | 상세설명 및 기능 | 제조사 |
AGR19060E | Transistor | TriQuint Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |