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AGR19090E 데이터시트 PDF




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AGR19090E 데이터시트, 핀배열, 회로
AGR19090E
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally
diffused metal oxide semiconductor (LDMOS) RF
power field effect transistor (FET) suitable for per-
sonal communication service (PCS) (1930 MHz—
1990 MHz), wide-band code division multiple access
(W-CDMA), global system for mobile communication
(GSM/EDGE), time-division multiple access (TDMA),
and single-carrier or multicarrier class AB power
amplifier applications.
AGR19090EU (unflanged) AGR19090EF (flanged)
Figure 1. Available Packages
N-CDMA Features
Typical 2 carrier N-CDMA performance: VDD =
28 V, IDQ = 850 mA, f1 = 1958.75 MHz, f2 =
1961.25 MHz, IS-95 CDMA (pilot, sync, paging,
traffic codes 8—13). Peak/average (P/A) = 9.72 dB
at 0.01% probability on CCDF. 1.2288 MHz trans-
www.DataShmreaeittsi4osUi(.ocAnoCmbPaRn)dwmiedathsu(BreWd)o. vAedrja3c0eknHt czhBaWnnaetl
power
f1 –
885 kHz and f2 + 885 kHz. Third-order intermodu-
lation (IM3) distortion measured over a
1.2288 MHz BW at f1 – 2.5 MHz and f2 + 2.5 MHz.
— Output power (POUT): 18 W.
— Power gain: 15.0 dB.
— Efficiency: 25.8%.
— IM3: –34.5 dBc.
— ACPR: –50 dBc.
EDGE Features
Typical EDGE performance (1960 MHz, 26 V,
IDQ = 800 mA):
— Output power (POUT): 36 W.
— Power gain: 15.0 dB.
— Efficiency: 38%.
— Modulation spectrum:
@ ±400 kHz = –61.0 dBc.
@ ±600 kHz = –73.0 dBc.
— Error vector magnitude (EVM) = 2.2%.
GSM Features
Typical performance over entire GSM band:
— P1dB: 90 W typical.
— Continuous wave (CW) power gain: @ P1dB =
14.0 dB.
— CW Efficiency @ P1dB = 50% typical.
— Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1930 MHz, 90 W CW
output power.
Large signal impedance parameters available.
ESD Rating*
AGR19090E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
tdaukreinngtoalal hvoainddelinxpgo, sausrseemtobElyS, Danadntdesetleocpterircaatlioonvse.rPAstEgreeAsrKes (DEeOvSic)es
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.




AGR19090E pdf, 반도체, 판매, 대치품
AGR19090E
90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19090E
VGG R3
R4
C10
Z1
RF INPUT C8
R2
FB1
C3 C4 C5
C7 Z13
VDD
+
C9 C11 C17 C12 C13 C14 C16 C15
Z14
Z2 C1 Z3 Z4 Z5 Z6
Z7
1 Z82
3
DUT
Z9 Z10
Z11 C2
C16
Z12
RF
OUTPUT
PINS: 1. DRAIN, 2. GATE, 3. SOURCE
A. Schematic
www.DataSheet4U.com
B. Component Layout
Parts List:
? Microstrip line: Z1 0.390 in. x 0.065 in.; Z2 0.300 in. x 0.065 in.; Z3 0.070 in. x 0.065 in.; Z4 0.400 in. x 0.260 in.; Z5 0.100 in. x 0.540 in.;
Z6 0.160 in. x 0.770 in.; Z7 0.275 in. x 1.160 in.; Z8 0.550 in. x 1.130 in.; Z9 0.300 in. x 0.205 in.; Z10 0.120 in. x 0.065 in.;
Z11 0.165 in. x 0.065 in.; Z12 0.555 in. x 0.065 in.; Z13 0.185 in. x 0.030 in.; Z14 0.845 in. x 0.050 in.
? ATC® B case chip capacitors: C1, C2, 10 pF, 100B100JCA500X; C7, C11, 8.2 pF, 100B8R2CA500X.
? Sprague® tantalum SMT: C9, C10, C15 22 µF, 35 V.
? Kemet®: B case chip capacitors: C3, C14 0.10 µF, CDR33BX104AKWS; tantalum capacitor: C16, 1 µF, 50 V T491C.
? Vitramon® 1206: C5, C12: 22000 pF.
? Murata®: 0805: C4, C13 0.01 µF, GRM40X7R103K100AL.
? 0603: C12 220 pF.
? Johanson Giga-Trim® variable capacitors: C8, C18 0.4 pF—2.5 pF.
? Fixed film chip resistors (0.25 W, 0.08 x 0.13): R2 4.7 Ω; R3 1.02 kΩ; R4 560 kΩ.
? Fair-Rite® ferrite bead: FB1: 2743019447.
? Taconic® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR19090E Test Circuit

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AGR19090E 전자부품, 판매, 대치품
AGR19090E
90 W, 1930 MHz —1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
60
55
50
45
40
35
30
25
20
15
10
5
0
1
10
POUT (W)
IM3
ACP
GPS
-10
-20
? -30
-40
-50
-60
-70
100
Test Conditions:
VDD = 28 Vdc, IDQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-
bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).
Figure 6. 2-Carrier N-CDMA ACPR, IM3, Power Gain, and Drain Efficiency vs. POUT
17
16
15
www.DataSheet4U.com
IDQ = 1300 mA
IDQ = 1100 mA
IDQ = 850 mA
14 IDQ = 650 mA
13 IDQ = 450 mA
12
1
10
POUT (W)
Test Conditions:
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.
Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT
100

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AGR19090E

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