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PDF IPB80CN10NG Data sheet ( Hoja de datos )
| Número de pieza | IPB80CN10NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPB80CN10NG (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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IPB80CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G IPU78CN10N G
OptiMOS®2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max (TO252)
ID
100 V
78 mΩ
13 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G
Package
Marking
PG-TO263-3
80CN10N
PG-TO252-3
78CN10N
PG-TO262-3
80CN10N
PG-TO220-3
80CN10N
PG-TO251-3
78CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
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Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=13 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=13 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
Value
13
9
52
17
6
±20
31
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-06-02
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
60
10 V
40 8 V
7V
20 6.5 V
6V
5.5 V
5V
4.5 V
0
0123
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
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4
25
20
IPB80CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G IPU78CN10N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
200
180
160
140
5V
120
5.5 V
6V
6.5 V
7V
100
80 8 V
60 10 V
40
20
0
5 0 10 20 30 40
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
20
15
15 10
10 175 °C
5
25 °C
5
0
0
Rev. 1.01
246
V GS [V]
0
80
page 5
10 20
I D [A]
30
2006-06-02
5 Page 
PG-TO252-3: Outline
IPB80CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G IPU78CN10N G
www.DataSheet4U.com
Rev. 1.01
page 11
2006-06-02
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet IPB80CN10NG.PDF ] | |
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