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FQP45N15V2 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 FQP45N15V2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 FQP45N15V2 자료 제공

부품번호 FQP45N15V2 기능
기능 150V N-Channel MOSFET
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


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FQP45N15V2 데이터시트, 핀배열, 회로
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Features
• 45A, 150V, RDS(on) = 0.04@VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP
GD S
TO-220F
FQPF
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
www.DataSheet4U.com
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP45N15V2 FQPF45N15V2
150
45 45 *
31 31 *
180 180 *
± 30
1124
45
22
4.5
220 66
1.47 0.44
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP45N15V2
0.68
0.5
62.5
FQPF45N15V2
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004




FQP45N15V2 pdf, 반도체, 판매, 대치품
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. VGS = 0 V
2. ID = 250 µA
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
103 Operation in This Area
is Limited by R DS(on)
102
10 µs
100 µs
1 ms
10 ms
101 DC 100 ms
100
10-1
100
Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e7P5uolCse
101
VDS, Drain-Source Voltage [V]
102
www.DataSheet4U.com Figure 9-1. Maximum Safe Operating Area
for FQP45N15V2
50
45
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs Case Temperature
©2004 Fairchild Semiconductor Corporation
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 22.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
103
102
101
100
10-1
100
OperationinThis Area
is Limited by RDS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC =25 oC
2.
3.
TSJin=gl1e7P5uolCse
101
VDS, Drain-Source Voltage [V]
102
Figure 9-2. Maximum Safe Operating Area
for FQPF45N15V2
Rev. A, October 2004

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FQP45N15V2 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
www.DataSheet4U.com
I SD
( DUT )
VDS
( DUT )
D = --GG--aa--tt-ee--PP--u-u-ll-ss-ee---WP--e-i-dr-ito-h-d-
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004

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관련 데이터시트

부품번호상세설명 및 기능제조사
FQP45N15V2

150V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor

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