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PDF WV3HG2128M72EEU-D6 Data sheet ( Hoja de datos )
| Número de pieza | WV3HG2128M72EEU-D6 | |
| Descripción | 2GB - 2x128Mx72 DDR2 SDRAM UNBUFFERED DIMM | |
| Fabricantes | White Electronic Designs | |
| Logotipo |  |
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White Electronic Designs WV3HG2128M72EEU-D6
ADVANCED*
2GB – 2x128Mx72 DDR2 SDRAM UNBUFFERED DIMM
FEATURES
Unbuffered 240-pin, dual in-line memory module
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4300 and PC2-3200
VCC = VCCQ = 1.8V
VCCSPD = +1.7V to +3.6V
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent
operation
Supports duplicate output strobe (RDQS/RDQS#)
Programmable CAS# latency (CL): 3, 4, 5* and 6*
Adjustable data-output drive strength
On-die termination (ODT)
Serial Presence Detect (SPD) with EEPROM
Auto & self refresh (64ms/8,192 cycle refresh)
Gold edge contacts
Dual Rank
RoHS compliant
www.DPataaSchkeaegt4eU.ocpomtion
• 240 Pin DIMM
• 30.00mm (1.181") TYP
DESCRIPTION
The WV3HG2128M72EEU is a 2x128Mx72 Double Data
Rate DDR2 SDRAM high density module. This memory
module consists of eighteen 128Mx8 bit with 4 banks
DDR2 Synchronous DRAMs in FBGA packages, mounted
on a 240-pin DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• Vendor source control options
• Industrial temperature option
• Parity function
Clock Speed
CL-tRCD-tRP
* Consult factory for availability
PC2-6400*
400MHz
6-6-6
OPERATING FREQUENCIES
PC2-5300*
333MHz
5-5-5
PC2-4300
266MHz
4-4-4
PC2-3200
200MHz
3-3-3
August 2006
Rev. 1
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 page  
White Electronic Designs WV3HG2128M72EEU-D6
ADVANCED
OPERATING TEMPERATURE CONDITION
Parameter
Operating Temperature (Commercial)
Symbol
TOPER
Rating
0ºC to 85ºC
Units
ºC
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JEDEC JESD51.2.
2. At 0 - 85ºC, operation temperature range, all DRAM specification will be supported.
Notes
1, 2
Parameter
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT DC LOGIC LEVEL
All voltages referenced to VSS
Symbol
VIH(DC)
VIL(DC)
Min
VREF + 0.125
-0.300
Max
VCC + 0.300
VREF - 0.125
Units
V
V
Parameter
AC Input Low (Logic 1) Voltage DDR2-400 & DDR2-533
AC Input High (Logic 1) Voltage DDR2-667
www.DataSheet4U.com
AC Input Low (Logic 0) Voltage DDR2-400 & DDR2-533
AC Input Low (Logic 0) Voltage DDR2-667
INPUT AC LOGIC LEVEL
All voltages referenced to VSS
Symbol
VIL(AC)
VIH(AC)
VIL(AC)
VIL(AC)
Min
VREF+ 0.250
VREF+ 0.200
Max
VREF - 0.250
VREF - 0.200
Units
V
V
V
V
August 2006
Rev. 1
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
5 Page 
White Electronic Designs WV3HG2128M72EEU-D6
ADVANCED
Document Title
2GB – 2x128Mx72 DDR2 SDRAM UNBUFFERED
DRAM Die Options:
• SAMSUNG: B-Die
• MICRON: U28A: A-Die, move to U38Z: D-Die Q4'06 and U48B: E-Die Q2'07
Revision History
Rev #
Rev 0
Rev 1
History
Created
1.0 Moved to Advanced
Release Date Status
June 2006
August 2006
Concept
Advanced
www.DataSheet4U.com
August 2006
Rev. 1
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet WV3HG2128M72EEU-D6.PDF ] | |
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