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IGW40T120 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 IGW40T120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IGW40T120 기능
기능 Low Loss IGBT
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IGW40T120 데이터시트, 핀배열, 회로
TrenchStop® Series
IGW40T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IGW40T120 1200V 40A
1.7V
150C G40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Package
PG-TO-247-3
Value
1200
75
40
105
105
20
10
270
-40...+150
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov. 09




IGW40T120 pdf, 반도체, 판매, 대치품
TrenchStop® Series
IGW40T120
100A
80A
60A
TC=80°C
TC=110°C
40A
Ic
20A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 15)
100A
10A
1A
tp=3µs
10µs
50µs
150µs
500µs
20ms
DC
0,1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)
250W
200W
150W
100W
50W
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 150C)
70A
60A
50A
40A
30A
20A
10A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2.4 Nov. 09

4페이지










IGW40T120 전자부품, 판매, 대치품
TrenchStop® Series
IGW40T120
25,0mJ
*) Eon and Etsinclude losses
due to diode recovery
20,0mJ
15,0mJ
10,0mJ
5,0mJ
15 mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
10 mJ
E*
on
Eoff
5 mJ
Ets*
Eon*
Eoff
0,0mJ
10A 20A 30A 40A 50A 60A 70A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=15Ω,
Dynamic test circuit in Figure E)
0 mJ

 

RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E)
15mJ
*) Eon and Ets include losses
due to diode recovery
15mJ
*) Eon and Ets include losses
due to diode recovery
10mJ
5mJ
Ets*
Eoff
Eon*
0mJ
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
10mJ
Ets*
5mJ Eoff
Eon*
0mJ
400V
500V
600V
700V
800V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=40A, RG=15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.4 Nov. 09

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부품번호상세설명 및 기능제조사
IGW40T120

Low Loss IGBT

Infineon Technologies
Infineon Technologies

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