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PDF WV3EG265M72EFSU-D4 Data sheet ( Hoja de datos )
| Número de pieza | WV3EG265M72EFSU-D4 | |
| Descripción | 1GB - 2x64Mx72 DDR SDRAM UNBUFFERED | |
| Fabricantes | White Electronic Designs | |
| Logotipo |  |
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White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED*
1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA
FEATURES
Unbuffered 200-pin (SO-DIMM), small-outline, dual-
in-line module
Fast data transfer rate: PC-2100, and PC-2700
Clock speeds of 133MHz, and 166MHz
Supports ECC error detection and correction
VCC = VCCQ = +2.5V ± 0.2V(133 and 166MHz)
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency: DDR 266 (2, 2.5
clock), DDR333 (2.5 clock)
Programmable Burst Length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto and self refresh, 7.8µs refresh interval
(8K/64ms refresh)
Serial presence detect (SPD) with EEPROM
Dual Rank
Leaded & lead-free/RoHS compliant
Gold edge contacts
JEDEC standard 200 pin, small-outline, SO-DIMM
wwwp.DaactkaaSgheeet4U.com
• PCB height option:
31.75 mm (1.25”)
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
DESCRIPTION
The WV3EG265M72EFSU is a 2x64Mx72 Double Data
Rate SDRAM memory module based on 512Mb DDR
SDRAM components. The module consists of eighteen
64Mx8 DDR SDRAMs in FBGA packages mounted on a
200 pin FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
Clock Speed
CL-tRCD-tRP
OPERATING FREQUENCIES
DDR333@CL=2.5
166MHz
2.5-3-3
DDR266@CL=2
133MHz
2-2-2
DDR266@CL=2.5
133MHz
2.5-3-3
May 2006
Rev. 0
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
1 page  
White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED
Parameter
AC Input High (Logic 1) Voltage
AC Input High (Logic 0) Voltage
Input Differential Voltafe, CK and CK# inputs
Input Crossing Point Voltage, CK and CK# input
AC OPERATING CONDITIONS
Symbol
Min
VIH(AC)
VREF + 0.31
VIL(AC)
VID(AC)
VIX(AC)
-
0.7
0.5*VCC - 0.2
Max
-
VREF - 0.31
VCC + 0.6
0.5*VCC + 0.2
Unit
V
V
V
V
INPUT/OUTPUT CAPACITANCE
TA=25°C, f=100MHz
Parameter
Input capacitance (A0~A12, BA0~BA1, RAS#, CAS#, WE#)
Input capacitance (CKE0, CKE1)
Input capacitance (CS0# - CS1#)
Input capacitance (CLK0, CLK0#)
Input capacitance (DM0~DM8)
Input capacitance (DQ0~DQ63), (CB0~CB7)
Symbol
CIN1
CIN2
CIN3
CIN4
CIN5
COUT1
Min
31
17.5
17.5
6
11
11
Max
49
26.5
26.5
7.5
13
13
Unit
pF
pF
pF
pF
pF
pF
www.DataSheet4U.com
May 2006
Rev. 0
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
5 Page 
White Electronic Designs WV3EG265M72EFSU-D4
ADVANCED
Document Title
1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, with PLL, FBGA
DRAM DIE OPTIONS:
• SAMSUNG: C-Die
• MICRON: T27Z: D-Die, will move to T37Z:F Q2’06
• NANYA: B-Die
Revision History
Rev #
Rev 0
History
Created
Release Date Status
May 2006
Advanced
www.DataSheet4U.com
May 2006
Rev. 0
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet WV3EG265M72EFSU-D4.PDF ] | |
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