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PDF FDD6778A Data sheet ( Hoja de datos )
| Número de pieza | FDD6778A | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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January 2009
FDD6778A
N-Channel PowerTrench® MOSFET
25 V, 14.0 mΩ
Features
General Description
Max rDS(on) = 14.0 mΩ at VGS = 10 V, ID = 10.0 A
Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 9.7 A
100% UIL tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low rDS(on) and fast
switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
S
D
DTO-P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
10
30
12
50
12
24
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.2
40
°C/W
Device Marking
FDD6778A
Device
FDD6778A
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDD6778A Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC = 6.2 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
10-4 10-3 10-2 10-1 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
1
0.1
0.01
0.001
10-4
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DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10-3
PDM
SINGLE PULSE
RθJA = 96 oC/W
(Note 1b)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
101
103
©2009 Fairchild Semiconductor Corporation
FDD6778A Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDD6778A.PDF ] | |
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