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부품번호 | FDD8647L 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
FDD8647L
N-Channel PowerTrench® MOSFET
40 V, 42 A, 9 mΩ
December 2008
Features
General Description
Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized BVDSS capability to offer
superior performance benefit in the application.
100% UIL tested
RoHS Compliant
Applications
Inverter
Power Supplies
D
G
S
D
DT O- P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
www.DataSheetS4Uym.cbomol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
42
52
14
100
33
43
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.9
40
°C/W
Device Marking
FDD8647L
Device
FDD8647L
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
1
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 13 A
8
6
VDD = 20 V
VDD = 15 V
VDD = 25 V
4
2
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
100
f = 1 MHz
Crss
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure8. CapacitancevsDrain
to Source Voltage
100
42
10 TJ = 25 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
www.DataSheet4U.com Figure9. UnclampedInductive
Switching Capability
100
200
100
10 100 us
THIS AREA IS
LIMITED BY rDS(on)
1
0.1
0.1
SINGLE PULSE
TJ = MAX RATED
RθJC = 2.9 oC/W
TC = 25 oC
1 10
1 ms
10 ms
100 ms
DC
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
60
50
40
30
20
10
0
25
Limited by Package
VGS = 10 V
VGS = 4.5 V
RθJC = 2.9 oC/W
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
105
VGS = 10 V
104
103
102
SINGLE PULSE
RθJC = 2.9 oC/W
TC = 25 oC
10
10-6
10-5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2008 Fairchild Semiconductor Corporation
FDD8647L Rev.C
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD8647L | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |