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PDF FDMS7672 Data sheet ( Hoja de datos )

Número de pieza FDMS7672
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS7672 Hoja de datos, Descripción, Manual

April 2009
FDMS7672
N-Channel PowerTrench® MOSFET
30 V, 5.0 m
Features
„ Max rDS(on) = 5.0 mat VGS = 10 V, ID = 19 A
„ Max rDS(on) = 6.9 mat VGS = 4.5 V, ID = 15 A
„ Advanced Package and Silicon design for low rDS(on) and high
efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switch
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
www.DataSheet4U.com
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Drain Current -Continuous (Package limited) TC = 25 °C
ID
-Continuous (Silicon limited)
-Continuous
TC = 25 °C
TA = 25 °C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
28
80
19
90
72
48
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.6
50
°C/W
Device Marking
FDMS7672
Device
FDMS7672
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7672 Rev.D
1
www.fairchildsemi.com

1 page




FDMS7672 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
20
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
Figure 15.
16
di/dt = 300 A/µs
12
8
4
0
-4
0 25 50 75 100 125 150
TIMES (nS)
Figure 14. Body Diode Reverse Recovery
www.DataSheet4U.com
Characteristics
1000
FDMS7672 Rev.D
5 www.fairchildsemi.com

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