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PDF FDS8840NZ Data sheet ( Hoja de datos )

Número de pieza FDS8840NZ
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDS8840NZ Hoja de datos, Descripción, Manual

FDS8840NZ
N-Channel PowerTrench® MOSFET
April 2009
40 V, 18.6 A, 4.5 m
Features
General Description
„ Max rDS(on) = 4.5 mat VGS = 10 V, ID = 18.6 A
„ Max rDS(on) = 6.0 mat VGS = 4.5 V, ID = 14.9 A
„ HBM ESD protection level of 6 kV typical(note 3)
„ High performance trench technology for extremely low rDS(on)
and fast switching
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
The FDS8840NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.
Applications
„ Synchronous Buck for Vcore and Server
„ Notebook Battery Pack
„ Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D
D
D
D
G
S
S
S
www.DataSheet4U.com
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1b)
Ratings
40
±20
18.6
63
600
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
25
50
°C/W
Device Marking
FDS8840NZ
Device
FDS8840NZ
Package
SO8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
1
www.fairchildsemi.com

1 page




FDS8840NZ pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0003
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
100
1000
www.DataSheet4U.com
©2009 Fairchild Semiconductor Corporation
FDS8840NZ Rev.C1
5
www.fairchildsemi.com

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