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UGF8DT 데이터시트 PDF




General Semiconductor에서 제조한 전자 부품 UGF8DT은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 UGF8DT 기능
기능 ULTRAFAST EFFICIENT PLASTIC RECTIFIER
제조업체 General Semiconductor
로고 General Semiconductor 로고


UGF8DT 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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UGF8DT 데이터시트, 핀배열, 회로
NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGF8AT THRU UGF8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes
0.405 (10.27)
0.383 (9.72)
ITO-220AC
0.140 (3.56)
0.130 (3.30) DIA.
0.600 (15.5)
0.580 (14.5)
0.560 (14.22)
0.530 (13.46)
PIN
12
0.670 (17.2)
0.646 (16.4)
0.191 (4.85)
0.171 (4.35)
0.060 (1.52)
0.350 (8.89)
0.330 (8.38)
0.188 (4.77)
0.172 (4.36)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
DI
0.122 (3.08)
0.110 (2.80)
0.100 (2.54)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
0.022 (0.55)
0.014 (0.36)
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
Ultrafast reverse
recovery time for high efficiency
Soft recovery characteristics
Excellent high temperature switching
Glass passivated chip junction
High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
MECHANICAL DATA
Case: ITO-220AC molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Mounting Torque: 5in. - lbs. max.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
wwMawta.TDxCaim=ta1uS0mh0e°aeCvt4eUra.cgoemforward rectified current
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
Maximum instantaneous forward voltage at 8.0
20A
5.0A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
(NOTE 2)
TJ=25°C
TJ=100°C
Maximum recovered stored charge
(NOTE 2)
TJ=25°C
TJ=100°C
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
trr
Qrr
CJ
RΘJC
TJ, TSTG
UGF8AT
50
35
50
UGF8BT
100
70
100
UGF8CT
150
105
150
8.0
UGF8DT
200
140
200
UNITS
Volts
Volts
Volts
Amps
150.0
1.00
1.20
0.95
10.0
300.0
20.0
30.0
50.0
20.0
45.0
45.0
5.0
-55 to+150
Amps
Volts
µA
ns
ns
nC
pF
°C/W
°C
NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
4/98





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관련 데이터시트

부품번호상세설명 및 기능제조사
UGF8DT

ULTRAFAST EFFICIENT PLASTIC RECTIFIER

General Semiconductor
General Semiconductor
UGF8DT

Ultrafast Rectifier ( Diode )

Vishay Siliconix
Vishay Siliconix

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