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PDF LG1628AXA Data sheet ( Hoja de datos )
| Número de pieza | LG1628AXA | |
| Descripción | LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier | |
| Fabricantes | Agere Systems | |
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Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Features
s High data rate: 2.5 Gbits/s
s High gain: 5.8 kΩ transimpedance
s Complementary 50 Ω outputs
s Low noise
s Ultrawide dynamic range
s Single –5.2 V ECL power supply
Applications
s SONET/SDH receivers
s SONET/SDH test equipment
s Digital video transmission
Functional Description
The Lucent Technologies Microelectronics Group
LG1628AXA is a hybrid integrated circuit that com-
bines the Lucent LG1628A gallium arsenide (GaAs)
transimpedance amplifier chip with an external Si
dual operational amplifier and necessary filtering to
achieve an ultrawide dynamic range amplifier. The
LG1628AXA is capable of handling input currents
from 3 µAavg to 4 mAavg (patent pending). Amplifier
operation is from a single –5.2 V power supply. The
targeted transmission system is SONET OC-48 and
SDH STM-16.
A complete receiver/regenerator can be constructed
with an LG1628AXA followed by an LG1605 limiting
amplifier and LG1600 clock and data regenerator.
Figure 1 shows the block diagram of the LG1628AXA
transimpedance amplifier. The amplifier consists of a
4.2 kΩ differential transimpedance stage followed by
a limiting buffer that provides complementary 50 Ω
outputs.
RF GND
IN–
ZEFF
IN+
RF
OUT+
OUT–
50 Ω
LIMITING
BUFFER
VSS
OVERLOAD CONTROL
5-5329(F)
Figure 1. LG1628AXA Functional Diagram
1 page  
Preliminary Data Sheet
January 1998
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent or latent damage to the device. These
are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
Supply Voltage Range (VSS)
Power Dissipation
Voltage (all pins)
Storage Temperature Range
Operating Temperature Range
Min Max Unit
–7 0.5 V
— 1W
0.5 VSS
V
–40 125 °C
0 100 °C
Recommended Operating Conditions
Table 4. Recommended Operating Conditions
Parameter
Ambient Temperature
Power Supply
Symbol
TA
VSS
Min
0
–4.7
Max
85
–5.7
Unit
°C
V
Handling Precautions
Although protection circuitry has been designed into this device, proper precautions should be taken to avoid expo-
sure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group
employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and pro-
tection design evaluation. No industry-wide standard has been adopted for the CDM. However, a standard HBM
(resistance = 1500 Ω, capacitance = 100 pF) is widely used and, therefore, can be used for comparison purposes.
The HBM ESD threshold presented here was obtained by using these circuit parameters.
Table 5. ESD Threshold
HBM ESD Threshold
Device
Voltage
LG1628AXA
>500 V
Lucent Technologies Inc.
5
5 Page 
Preliminary Data Sheet
January 1998
Notes
LG1628AXA SONET/SDH 2.488 Gbits/s
Transimpedance Amplifier
Lucent Technologies Inc.
11
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