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IRFZ46ZS 데이터시트 PDF




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기능 AUTOMOTIVE MOSFET
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IRFZ46ZS 데이터시트, 핀배열, 회로
PD - 94769
AUTOMOTIVE MOSFET
IRFZ46Z
IRFZ46ZS
Features
O Advanced Process Technology
O Ultra Low On-Resistance
IRFZ46ZL
HEXFET® Power MOSFET
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
D
VDSS = 55V
O Repetitive Avalanche Allowed up to Tjmax
Description
G
RDS(on) = 13.6m
Specifically designed for Automotive applica-
tions, this HEXFET® Power MOSFET utilizes the
latest processing techniques to achieve extremely
S ID = 51A
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
other applications.
Absolute Maximum Ratings
TO-220AB
IRFZ46Z
D2Pak
IRFZ46ZS
TO-262
IRFZ46ZL
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
cPulsed Drain Current
51
36
200
A
PD @TC = 25°C Maximum Power Dissipation
82 W
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
0.54
± 20
63
97
See Fig.12a,12b,15,16
W/°C
V
mJ
A
mJ
TJ Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
jRθJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.84
–––
62
40
°C/W
www.irf.com
1
09/12/03




IRFZ46ZS pdf, 반도체, 판매, 대치품
IRFZ46Z/S/L
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12.0
ID= 31A
10.0
VDS= 44V
VDS= 28V
VDS= 11V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30
QG Total Gate Charge (nC)
35
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
10.00
TJ = 175°C
1.00
TJ = 25°C
0.10
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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4페이지










IRFZ46ZS 전자부품, 판매, 대치품
IRFZ46Z/S/L
1000
Duty Cycle = Single Pulse
100
0.01
10 0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current vs.Pulsewidth
1.0E-01
70
TOP
Single Pulse
60 BOTTOM 1% Duty Cycle
ID = 31A
50
40
30
20
10
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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