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부품번호 | 03P6MG 기능 |
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기능 | (03P4MG / 03P6MG) 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR | ||
제조업체 | NEC | ||
로고 | |||
전체 6 페이지수
DATA SHEET
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
• 400 and 600 V high-withstanding-voltage series of products
• The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
• High-sensitivity thyristor (IGT = 3 to 50 µA)
• Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
PACKAGE DRAWING (Unit: mm)
φ 5.2 MAX.
Electrode connection
1: Gate
2: Anode
3: Cathode
0.5
1.27
*TC test bench-mark
Standard weight: 0.3 g
2.54
123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
03P4MG
03P6MG
Non-repetitive Peak Reverse Voltage
VRSM
700
700
Non-repetitive Peak Off-state Voltage
www.DataSheReet4pUet.ictiovme Peak Reverse Voltage
VDSM
VRRM
700
400
700
600
Repetitive Peak Off-state Voltage
VDRM
400
600
Average On-state Current
IT(AV) 300 (TA = 30°C, Single half-wave, θ = 180°)
Effective On-state Current
5 Surge On-state Current
Fusing Current
IT(RMS)
ITSM
∫ iT2dt
470
8 (f = 50 Hz, Sine half-wave, 1 cycle)
0.15 (1 ms ≤ t ≤ 10 ms)
Critical Rate of On-state Current of Rise dIT/dt
20
Peak Gate Power Dissipation
PGM 100 (f ≥ 50 Hz, Duty ≤ 10%)
Average Gate Power Dissipation
PG(AV)
10
Peak Gate Forward Current
IFGM 100 (f ≥ 50 Hz, Duty ≤ 10%)
Peak Gate Reverse Voltage
VRGM
6
Junction Temperature
Tj −40 to +125
Storage Temperature
Tstg −55 to +150
Unit Remarks
V RGK = 1 kΩ
V RGK = 1 kΩ
V RGK = 1 kΩ
V RGK = 1 kΩ
mA Refer to Figure 10.
mA −
A Refer to Figure 2.
A2s −
A/µs
−
mW Refer to Figure 3.
mW Refer to Figure 3.
mA −
V−
°C −
°C −
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002
Figure 9. PT(AV) vs. IT(AV) Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Single Half-wave
θ
θ = 180˚
120˚
90˚
60˚
30˚
DC
100 200 300 400
Average On-state Current IT(AV) (mA)
500
Figure 11. PT(AV) vs. IT(AV) Characteristics
Single Full-wave
0.7
0.6
θ
0.5 120˚
90˚ θ = 180˚
0.4 60˚
0.3 30˚
0.2
0.1
0
www.DataSheet4U.c0om
100 200 300 400
Average On-state Current IT(AV) (mA)
500
Figure 13. IH vs. TA Example of Characteristics
10
5
03P4MG,03P6MG
Figure 10. TA vs. IT(AV) Characteristics
Single Half-wave
120
100 θ
80
60
40
20
30˚ 60˚ 90˚ 120˚ θ = 180˚ DC
0
0 100 200 300 400 500
Average On-state Current IT(AV) (mA)
Figure 12. TA vs. IT(AV) Characteristics
Single Full-wave
120
100 θ
80
60
40
20
30˚ 60˚ 90˚ 120˚ θ = 180˚
0
0 100 200 300 400 500
Average On-state Current IT(AV) (mA)
1
0.5
0.1
−40 −20 0 20 40 60 80 100 120 140
Ambient Temperature TA (°C)
4 Data Sheet D15290EJ4V0DS
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부품번호 | 상세설명 및 기능 | 제조사 |
03P6MG | (03P4MG / 03P6MG) 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR | NEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |