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5SMX12K1701 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 5SMX12K1701
기능 IGBT-Die
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5SMX12K1701 데이터시트, 핀배열, 회로
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Doc. No. 5SYA1619-01 July 03
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Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
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VCES
IC
ICM
VGES
tpsc
Tvj
VGE = 0 V, Tvj 25 °C
Limited by Tvjmax
VCC = 1300 V, VCEM 1700 V
VGE 15 V, Tvj 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
PLQ PD[ 8QLW
1700 V
75 A
150 A
-20 20 V
10 µs
-40 150 °C
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5SMX12K1701 pdf, 반도체, 판매, 대치품
60; .
150 150
VCE = 25 V
25 °C
125
125
125 °C
100 100
75 75
50
25
VGE = 15 V
0
012345
VCE [V]
50
125 °C
25 °C
25
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
)LJ  Typical onstate characteristics
)LJ  Typical transfer characteristics
0.080
VCC = 900 V
0.070
RG = 15 ohm
VGE = ±15 V
Tvj = 125 °C
0.060 Lσ = 160 nH
www.DataSheet4U.com
0.050
0.040
0.030
0.020
0.010
Eon
Eoff
0.000
0
25 50 75 100 125 150
Ic [A]
0.050
0.045
0.040
0.035
VCC = 900 V
IC = 75 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 160 nH
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
10
Eon
Eoff
20 30
RG [ohm]
40
50
)LJ  Typical switching characteristics vs
collector current
)LJ  Typical switching characteristics vs
gate resistor
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Doc. No. 5SYA1619-01 July 03
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5SMX12K1701

IGBT-Die

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ABB

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