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5SMX12L1273 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 5SMX12L1273
기능 IGBT-Die
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5SMX12L1273 데이터시트, 핀배열, 회로
VCE =
IC =
1200 V
100 A
IGBT-Die
5SMX 12L1273
Die size: 12.6 x 12.6 mm
Low loss, rugged SPT technology
Smooth switching for good EMC
Minimized gate charge, short delay times
Optimized for paralleling
Large bondable emitter area
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
VCES VGE = 0 V, Tvj 25 °C
DC collector current
IC
Peak collector current
ICM Limited by Tvjmax
Gate-emitter voltage
VGES
IGBT short circuit SOA
tpsc
VCC = 900 V, VCEM 1200 V
VGE 15 V, Tvj 125 °C
Junction temperature
www.DataSheet4U.com
Tvj
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
Doc. No. 5SYA 1634-00 June 05
min max Unit
1200 V
100 A
200 A
-20 20 V
10 µs
-40 150 °C
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.




5SMX12L1273 pdf, 반도체, 판매, 대치품
5SMX 12L1273
200
150
25 °C
125 °C
200
VCE = 20 V
150
100 100
50
VGE = 15 V
0
012345
VCE [V]
125 °C
50
25 °C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VGE [V]
Fig. 1 Typical on-state characteristics
Fig. 2 Typical transfer characteristics
0.07
VCC = 600 V
0.06
RGon = 6.8 ohm
RGoff = 10 ohm
VGE = ±15 V
www.Data0S.h0e5et4UTL.cσvjo==m61025nH°C
0.04
0.03
Eon
0.02
0.01
Eoff
0.00
0
50 100 150 200 250 300
IC [A]
0.050
0.045
0.040
0.035
VCC = 600 V
IC = 100 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
10 20
Eon
30 40
RG [ohm]
Eoff
50 60
70
Fig. 3 Typical switching characteristics vs
collector current
Fig. 4 Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1634-00 June 05
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부품번호상세설명 및 기능제조사
5SMX12L1273

IGBT-Die

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ABB

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