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PDF FGPF50N33BT Data sheet ( Hoja de datos )
| Número de pieza | FGPF50N33BT | |
| Descripción | 330V PDP Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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FGPF50N33BT
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V @ IC = 50 A
• High Input Impedance
• RoHS Compliant
Applications
• PDP TV
November 2013
General Description
Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.
GC E
TO-220F
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICpulse (1)*
ICpulse (2)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
1
Ratings
330
30
50
120
160
43
17.2
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
oC
oC
oC
Typ.
-
-
Max.
2.9
62.5
Unit
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
VGE = 15V, RG = 5
100 TC = 25oC
TC = 125oC
tr
Figure 14. Turn-off Characteristics vs.
Collector Current
5000
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
tf
td(on)
10
5
10 20 30 40 50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
5000
1000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Eoff
100
Eon
100
td(off)
10
10
20 30 40
Collector Current, IC [A]
50
Figure 16. Switching Loss vs. Collector Current
20000
10000
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
Eoff
100
Eon
10
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 17. Turn off Switching SOA Characteristics
200
100
1
10
20 30 40
Collector Current, IC [A]
50
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
500
©2008 Fairchild Semiconductor Corporation
FGPF50N33BT Rev. C1
5
www.fairchildsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGPF50N33BT.PDF ] | |
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