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PDF F3HNK90Z Data sheet ( Hoja de datos )
| Número de pieza | F3HNK90Z | |
| Descripción | STF3HNK90Z | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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1. F3HNK90Z transistor mosfet  Hay una vista previa y un enlace de descarga de F3HNK90Z (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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STP3HNK90Z
STF3HNK90Z
N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP3HNK90Z
STP3HNK90Z
VDSS
(@Tjmax)
900 V
900 V
RDS(on)
< 0.42 Ω
< 0.42 Ω
ID
3A
3A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
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Applications
■ Switching application
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STP3HNK90Z
STF3HNK90Z
Marking
P3HNK90Z
F3HNK90Z
Package
TO-220
TO-220FP
Packaging
Tube
Tube
August 2006
Rev 3
1/15
www.st.com
15
1 page  
STP3HNK90Z - STF3HNK90Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 30V
Gate threshold voltage
VDS = VGS, ID = 50µA
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Min. Typ. Max. Unit
900 V
1 µA
50 µA
±10 µA
3 3.75 4.5
V
3.5 4.2 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 1.5A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
19
690
71
14.4
S
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 720V
88
pF
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td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=450 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
23 ns
28 ns
42 ns
27 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=720V, ID = 3A
VGS =10V
26 35
5.7
13.9
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15
5 Page 
STP3HNK90Z - STF3HNK90Z
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
www.DataSheet4U.com
11/15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet F3HNK90Z.PDF ] | |
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