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Número de pieza | EIB1415-4P | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIB1415-4P (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! UPDATED 06/14/06
EIB1415-4P
14.40-15.35GHz 4W Internally Matched Power FET
FEATURES
• 14.40-15.35 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.0 dBm Output Power at 1dB Compression
• 7.0 dB Power Gain at 1dB Compression
• 23% Power Added Efficiency
• -46 dBc IM3 at PO = 25.0 dBm SCL
• Non-Hermetic Metal Flange Package
EIB1415-4P
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 14.40-15.35GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 8 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 1600mA
f = 14.40-15.35GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 14.40-15.35GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2
VDS = 8 V, IDSQ ≈ 65% IDSS
f = 15.35GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
www.DataSheeVt4PU.com Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 24 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
35.0
6.0
TYP
36.0
7.0
23
1700
MAX
±0.6
1900
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
2720
3400
mA
-2.0 -3.5
V
4.5 5.0 oC/W
3) Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
10V
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current 43.2mA
Igsr
Reverse Gate Current
-7.2mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
35.0dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation 30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-4V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
30W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised June 2006
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet EIB1415-4P.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIB1415-4P | Internally Matched Power FET | Excelics Semiconductor |
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