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부품번호 | EM621FU16BU 기능 |
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기능 | 128K x 16 bit Low Power and Low Voltage Full CMOS Static RAM | ||
제조업체 | Emerging Memory | ||
로고 | |||
Document Title
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
0.1 Revision
EM621FU16BU Series
Low Power, 128Kx16 SRAM
Draft Date
Oct. 31, 2007
Nov. 16, 2007
Remark
www.DataSheet4U.com
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM621FU16BU Series
Low Power, 128Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
VCC
VSS
VIH
VIL
Min
2.7
0
2.0
-0.23)
Typ
Max
Unit
3.0 3.3 V
0 0V
-
VCC + 0.22)
V
- 0.6 V
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +2.0 V in case of pulse width < 20ns
3. Undershoot: -2.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Input capacitance
Input/Ouput capacitance
Symbol
CIN
CIO
Test Condition
VIN=0V
VIO=0V
Min Max Unit
- 8 pF
- 10 pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
www.DOautatpSuhteleeta4Uka.cgoemcurrent
Operating power supply
Average operating current
Symbol
Test Conditions
ILI VIN=VSS to VCC
ILO
CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
ICC IIO=0mA, CS=VIL, VIN=VIH or VIL
ICC1
Cycle time=1µs, 100% duty, IIO=0mA,
CS<0.2V, LB<0.2V or/and UB<0.2V,
VIN<0.2V or VIN>VCC-0.2V
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, LB=VIL or/and UB=VIL ,
VIN=VIL or VIH
Output low voltage
Output high voltage
Standby Current (TTL)
Standby Current (CMOS)
VOL
VOH
ISB
ISB1
IOL = 2.1mA
IOH = -1.0mA
CS=VIH, Other inputs=VIH or VIL
CS>VCC-0.2V, (CS controlled)
Other inputs = 0~VCC
(Typ. condition : VCC=3.0V @ 25oC)
(Max. condition : VCC=3.3V @ 85oC)
NOTES
1. Typical values are measured at Vcc=3.0V, TA=25oC and not 100% tested.
Min Typ Max Unit
-1 - 1 uA
-1 - 1 uA
- - 3 mA
- - 3 mA
45ns
55ns
-
-
- 35
- 30 mA
70ns -
- 25
- - 0.4 V
2.4 - - V
- - 0.3 mA
LF - 11) 10 uA
4
4페이지 EM621FU16BU Series
Low Power, 128Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
Address
tWC
CS
UB,LB
WE
Data in
Data out
tCW(2)
tAW
tBW
tWP(1)
tAS(3)
High-Z
tWHZ
Data Undefined
tWR(4)
tDW tDH
Data Valid
High-Z
tOW
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
www.DataSheet4U.com
Address
CS
UB,LB
WE
Data in
Data out
tAS(3)
High-Z
tWC
tCW(2)
tAW
tBW
tWP(1)
tWR(4)
tDW tDH
Data Valid
High-Z
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ EM621FU16BU.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
EM621FU16BU | 128K x 16 bit Low Power and Low Voltage Full CMOS Static RAM | Emerging Memory |
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