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부품번호 | PBHV8115Z 기능 |
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기능 | 1A NPN high-voltage low VCEsat (BISS) transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 9 December 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115Z.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
I Medium power SMD plastic package
1.3 Applications
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I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 150 V
- - 1A
100 250 -
NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 175 K/W
[2] - - 89 K/W
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
103
Zth(j-a)
(K/W) duty cycle = 1
102 0.75
0.33
0.5
0.2
0.1
10
0.05
0.02
0.01
10
006aab156
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
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Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
10 0.1
0.5
0.2
0.05
0.02
10
0.01
006aab157
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8115Z_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
1
VCEsat
(V)
10−1
10−2
006aab162
(1)
(2)
(3)
10
VCEsat
(V)
1
10−1
10−2
(1)
(2)
(3)
006aab163
10−3
10−1
1
10 102 103 104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab164
10−3
10−1
1
10 102 103 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
(Ω)
102
006aab165
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10
1
(1)
(2)
10−1
10−1
1
(3)
10 102 103 104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
(2)
1
(3)
10−1
10−1
1
10 102 103 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV8115Z_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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부품번호 | 상세설명 및 기능 | 제조사 |
PBHV8115T | 1A NPN high-voltage low VCEsat (BISS) transistor | NXP Semiconductors |
PBHV8115Z | 1A NPN high-voltage low VCEsat (BISS) transistor | NXP Semiconductors |
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