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PBHV8115Z 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PBHV8115Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 PBHV8115Z 기능
기능 1A NPN high-voltage low VCEsat (BISS) transistor
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PBHV8115Z 데이터시트, 핀배열, 회로
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 9 December 2008
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115Z.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
I Medium power SMD plastic package
1.3 Applications
www.DataSheet4U.com
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 10 V;
IC = 50 mA
Min Typ Max Unit
- - 150 V
- - 1A
100 250 -




PBHV8115Z pdf, 반도체, 판매, 대치품
NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 175 K/W
[2] - - 89 K/W
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
103
Zth(j-a)
(K/W) duty cycle = 1
102 0.75
0.33
0.5
0.2
0.1
10
0.05
0.02
0.01
10
006aab156
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
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Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
10 0.1
0.5
0.2
0.05
0.02
10
0.01
006aab157
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8115Z_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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PBHV8115Z 전자부품, 판매, 대치품
NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
1
VCEsat
(V)
101
102
006aab162
(1)
(2)
(3)
10
VCEsat
(V)
1
101
102
(1)
(2)
(3)
006aab163
103
101
1
10 102 103 104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
()
102
006aab164
103
101
1
10 102 103 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
103
RCEsat
()
102
006aab165
www.DataSheet4U.com
10
1
(1)
(2)
101
101
1
(3)
10 102 103 104
IC (mA)
IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
(2)
1
(3)
101
101
1
10 102 103 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV8115Z_2
Product data sheet
Rev. 02 — 9 December 2008
© NXP B.V. 2008. All rights reserved.
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